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Learn more about ECAD Model here.Electrical Characteristics
Additional Feature | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 |
Drain Current-Max (ID) | 0.23 |
Drain-source On Resistance-Max | 7.5 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 5 |
JEDEC-95 Code | TO-226AA |
JESD-30 Code | O-PBCY-W3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | ROUND |
Package Style | CYLINDRICAL |
Polarity/Channel Type | N-CHANNEL |
Qualification Status | Not Qualified |
Surface Mount | NO |
Terminal Form | WIRE |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |