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VNN1NV04PTR-E | ST MICROELECTRONICS

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ST MICROELECTRONICS VNN1NV04PTR-E

SOT223-4/OMNIFET II fully autoprotected Power MOSFET


Ordering Info

In Stock: 0

MOQ: 1000

Package Quantity: 1000

COO: CN

Subject to tariff fees.

Quantity Cost
1000 -

Electrical Characteristics

Built-in Protections TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
Interface IC Type BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Length 6.5
Moisture Sensitivity Level 1
Number of Functions 1
Number of Terminals 4
Output Current Flow Direction SINK
Output Peak Current Limit-Nom 1.7
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.8
Supply Voltage-Nom 5
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Pitch 2.3
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Turn-off Time 5.5
Turn-on Time 1
Width 3.5