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VP0808B | VISHAY/SILICONIX

VISHAY/SILICONIX VP0808B

Small Signal Field-Effect Transistor,0.88AI(D),80V, 1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET, TO-205AD


Ordering Info

In Stock: 16

MOQ: 1

Package Quantity: 1

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Electrical Characteristics

Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80
Drain Current-Max (ID) 0.88
Drain-source On Resistance-Max 5
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25
JEDEC-95 Code TO-205AD
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 6.25
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON