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Learn more about ECAD Model here.DIODES INC. ZVN2110A
N-Channel 100 V 4 Ohm Enhancement Mode Vertical DMOS FET- TO-92
Ordering Info
In Stock: 0
MOQ: 1
Package Quantity: 1
COO: CN
Subject to tariff fees.
| Quantity | Cost |
|---|---|
| 1 | - |
Electrical Characteristics
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 100 |
| Drain Current-Max (Abs) (ID) | .32 |
| Drain Current-Max (ID) | .32 |
| Drain-source On Resistance-Max | 4 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 8 |
| JESD-30 Code | O-PSIP-W3 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | NOT APPLICABLE |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | .7 |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Powers |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | WIRE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Element Material | SILICON |