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DIODES INC. ZVN2110A
N-Channel 100 V 4 Ohm Enhancement Mode Vertical DMOS FET- TO-92
Ordering Info
In Stock: 0
MOQ: 1
Package Quantity: 1
HTS Code: 8541.21.00
ECCN: EAR99
COO: CN
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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 1 | - |
Electrical Characteristics
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 100 |
| Drain Current-Max (Abs) (ID) | .32 |
| Drain Current-Max (ID) | .32 |
| Drain-source On Resistance-Max | 4 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 8 |
| JESD-30 Code | O-PSIP-W3 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | NOT APPLICABLE |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | .7 |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Powers |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | WIRE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Element Material | SILICON |