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ZVN2110GTA | DIODES INC.

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DIODES INC. ZVN2110GTA

ZVN2110G Series 100 V 4 Ohm N-Channel Enhancement Mode Vertical DMOS FET-SOT-223


Ordering Info

In Stock: 10000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00

ECCN: EAR99

COO: DE

Quantity Cost
1000-9999 $0.2571
10000+ $0.24


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Electrical Characteristics

Additional Feature FAST SWITCHING
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100
Drain Current-Max (ID) 0.5
Drain-source On Resistance-Max 4
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 6
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON