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ZVN4206GTA | DIODES INC.

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DIODES INC. ZVN4206GTA

ZVN4206G Series 60 V 1 Ohm N-Channel Enhancement Mode Vertical DMOS FET -SOT-223


Ordering Info

In Stock: 2000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00

ECCN: EAR99

COO: DE

Quantity Cost
1000-1999 $0.2929
2000+ $0.2733


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Electrical Characteristics

Additional Feature FAST SWITCHING
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 1
Drain Current-Max (ID) 1
Drain-source On Resistance-Max 1.5
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2
Pulsed Drain Current-Max (IDM) 8
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON