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ZVN4310GTA | DIODES INC.

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DIODES INC. ZVN4310GTA

ZVN4310G 100 V 0.54 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-223


Ordering Info

In Stock: 4000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00

ECCN: EAR99

COO: DE

Quantity Cost
1000-3999 $0.6786
4000+ $0.6333


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Electrical Characteristics

Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 1.67
Drain Current-Max (ID) 1.67
Drain-source On Resistance-Max .75
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3
Pulsed Drain Current-Max (IDM) 12
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON