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ZVP2110GTA | DIODES INC.

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DIODES INC. ZVP2110GTA

ZVP2110G Series 100 V 8 Ohm P-Channel Enhancement Mode Vertical DMOS FET-SOT-223


Ordering Info

In Stock: 1500

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00.95

ECCN: EAR99

COO: DE

Quantity Cost
1000 -

Electrical Characteristics

Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100
Drain Current-Max (ID) .31
Drain-source On Resistance-Max 8
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 3
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON