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ZXM64P035GTA | DIODES INC.

DIODES INC. ZXM64P035GTA

Small Signal Field-Effect Transistor, 3.8AI(D),35V,1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

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Electrical Characteristics

Additional Feature LOW THRESHOLD
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 35
Drain Current-Max (ID) 3.8
Drain-source On Resistance-Max 0.075
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON