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ZXMC3A16DN8TA | DIODES INC.

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DIODES INC. ZXMC3A16DN8TA

N + P-CHANNEL 30V MOSFET (UMOS)


Ordering Info

In Stock: 500 Delivery

MOQ: 500

Package Quantity: 500

COO: CN

Subject to tariff fees.

Quantity Cost
500+ $0.8517


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Electrical Characteristics

Additional Feature LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 4.2
Drain Current-Max (ID) 4.9
Drain-source On Resistance-Max .035
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2.1
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON