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DUAL N-CHANNEL 30V MOSFET (HDMOS)
Ordering Info
In Stock: 0
MOQ: 1000
Package Quantity: 1000
COO: CN
Subject to tariff fees.
Quantity | Cost |
---|---|
1000 | - |
Electrical Characteristics
Additional Feature | LOW THRESHOLD |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 |
Drain Current-Max (ID) | 2.3 |
Drain-source On Resistance-Max | .135 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | MO-187AA |
JESD-30 Code | S-PDSO-G8 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 2 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | SQUARE |
Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Qualification Status | Not Qualified |
Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |