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ZXMD63N03XTA | DIODES INC.

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DIODES INC. ZXMD63N03XTA

DUAL N-CHANNEL 30V MOSFET (HDMOS)


Ordering Info

In Stock: 0

MOQ: 1000

Package Quantity: 1000

COO: CN

Subject to tariff fees.

Quantity Cost
1000 -

Electrical Characteristics

Additional Feature LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) 2.3
Drain-source On Resistance-Max .135
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-187AA
JESD-30 Code S-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON