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ZXMN10A08DN8TA | DIODES INC.

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DIODES INC. ZXMN10A08DN8TA

ZXMN10A08 Series 100 V 0.25 Ohm N-Channel Enhancement Mode MOSFET -SOIC-8


Ordering Info

In Stock: 4000 Delivery

MOQ: 500

Package Quantity: 500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
500-3999 $0.4429
4000+ $0.4133


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 2.1
Drain Current-Max (ID) 2.1
Drain-source On Resistance-Max .25
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.8
Pulsed Drain Current-Max (IDM) 9
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON