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ZXMN10A11GTA | DIODES INC.

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DIODES INC. ZXMN10A11GTA

ZXMN10A11G Series 100 V 0.35 Ohm N-Channel Enhancement Mode MOSFET -SOT-223


Ordering Info

In Stock: 41000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
1000-40999 $0.3643
41000+ $0.34


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Electrical Characteristics

Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 2.4
Drain Current-Max (ID) 1.9
Drain-source On Resistance-Max .6
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.9
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON