Request Quote













Request Quote


ZXMN10B08E6TA | DIODES INC.

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

DIODES INC. ZXMN10B08E6TA

ZXMN10B Series 100 V 0.23 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6


Ordering Info

In Stock: 36000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-35999 $0.3357
36000+ $0.3133


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Additional Feature LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (ID) 1.6
Drain-source On Resistance-Max .23
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 9
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON