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MOSFET P-CH 100V 2.6A SOT223
Ordering Info
In Stock: 6000 Delivery
MOQ: 1000
Package Quantity: 1000
HTS Code: 8541.29.0095
ECCN: EAR99
COO: CN
Subject to tariff fees.
Quantity | Cost |
---|---|
1000-5999 | $1.25 |
6000+ | $1.16 |
Secure Payment Methods:
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Electrical Characteristics
Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 |
Drain Current-Max (Abs) (ID) | 2.6 |
Drain Current-Max (ID) | 2.6 |
Drain-source On Resistance-Max | 0.15 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G4 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 3.9 |
Pulsed Drain Current-Max (IDM) | 16.5 |
Qualification Status | Not Qualified |
Sub Category | Other Transistors |
Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |