Manufacturer
Additional Feature
Case Connection
Collector Current-Max (IC)
Collector-emitter Voltage-Max
Configuration
Fall Time-Max (tf)
Gate-emitter Thr Voltage-Max
Gate-emitter Voltage-Max
IHS ObjectID
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
Moisture Sensitivity Level
Number of Elements
Number of Terminals
Operating Temperature-Max
Package Body Material
Package Shape
Package Style
Peak Reflow Temperature (Cel)
Polarity/Channel Type
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Qualification Status
Rise Time-Max (tr)
Sub Category
Surface Mount
Terminal Finish
Terminal Form
Terminal Position
Time@Peak Reflow Temperature-Max (s)
Transistor Application
Transistor Element Material
Turn-off Time-Nom (toff)
Turn-on Time-Nom (ton)
VCEsat-Max
Items per page:
| Part Number | Part Description | In Stock | On Order | Lead Time (weeks) | Price |
|---|---|---|---|---|---|
|
STGD6NC60HDT4 Mfr: st microelectronics |
Line Transceiver, 2 Func, 2 Driver, 2 Rcvr,PDSO16 | 52500 | 0 |
|
|
|
STGP19NC60KD Mfr: st microelectronics |
Insulated Gate Bipolar Transis | 50400 | 0 |
|
|
|
STGD3HF60HDT4 Mfr: st microelectronics |
Switching Regulator, 1.1A | 30000 | 0 |
|
|
|
STGD6NC60HDT4 Mfr: st microelectronics |
Adjustable Positive LDO Regulator, 0.8VMin,5.1VMax, 0.4V Dropout, PDSO5 | 27500 | 0 |
|
|
|
STGB3NC120HDT4 Mfr: st microelectronics |
Power Field-Effect Transistor | 22000 | 0 |
|
|
|
STGP6NC60HD Mfr: st microelectronics |
InsulatedGateBipolarTransistor,15AI(C),600VV(BR)CES,N-Channel | 19200 | 0 |
|
|
|
STGW39NC60VD Mfr: st microelectronics |
InsulatedGateBipolarTransistor,40AI(C),382VV(BR)CES,N-Channel,TO-263AB | 18000 | 0 |
|
|
|
IRG4PC50UDPBF Mfr: infineon |
Power Field-Effect Transistor,30AI(D),55V,0.0245ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-251AA | 10093 | 0 |
|
|
|
IRGP4066D-EPBF Mfr: infineon |
IRGP4066D Series 600 V 140 A U | 5378 | 0 |
|
|
|
STGB18N40LZT4 Mfr: st microelectronics |
DC-DC Regulated Power Supply Module, 1 Output,1W,Hybrid | 5000 | 0 |
|
|
|
STGF20H60DF Mfr: st microelectronics |
InsulatedGateBipolarTransistor,11AI(C),600VV(BR)CES,N-Channel,TO-220AB | 4200 | 0 |
|
|
|
STGB20NB41LZT4 Mfr: st microelectronics |
Power Field-Effect Transistor | 4000 | 0 |
|
|
|
IRGS14C40LPBF Mfr: infineon |
InsulatedGateBipolarTransistor,45AI(C),1200VV(BR)CES,N-Channel,TO-247AC | 3100 | 0 |
|
|
|
IRG4PC40SPBF Mfr: infineon |
Power Field-Effect Transistor, 23A I(D),100V,0.117ohm, 1-Element, P-Channel,Silicon,Metal-oxide Semiconductor FET, TO-247AC | 2875 | 0 |
|
|
|
IRG4PC50WPBF Mfr: infineon |
Power Field-Effect Transistor, 195A I(D),75V,0.003ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-263AB | 2650 | 0 |
|
|
|
IRG4PH50UDPBF Mfr: infineon |
InsulatedGateBipolarTransistor,60AI(C),600VV(BR)CES,N-Channel,TO-247AC | 2550 | 0 |
|
|
|
IRGP4069DPBF Mfr: infineon |
IRGP4069DPBF Series N-Channel | 2450 | 0 |
|
|
|
IRG4PH50KDPBF Mfr: infineon |
2255 | 0 |
|
||
|
IRGP50B60PD1PBF Mfr: infineon |
Power Field-Effect Transistor, 61AI(D),100V,0.0139ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-263AB | 2099 | 0 |
|
|
|
STGF20H60DF Mfr: st microelectronics |
H Series 600 V 40 A Flange Mou | 2000 | 0 |
|
|
|
STGP8NC60KD Mfr: st microelectronics |
STGP8NC60K Series N-Channel 60 | 2000 | 0 |
|
|
|
IRG4IBC30UDPBF Mfr: infineon |
N-Channel 600 V 17 A Flange Mo | 1951 | 0 |
|
|
|
IRG4PH30KDPBF Mfr: infineon |
IRG4PH30KDPBF Series 1200 V 10 | 1631 | 0 |
|
|
|
STGP14NC60KD Mfr: st microelectronics |
Analog Circuit, 1 Func, PDSO10 | 1532 | 0 |
|
|
|
IRG4PH50KDPBF Mfr: infineon |
1525 | 0 |
|
||
|
IRG4PH40KDPBF Mfr: infineon |
IRG4PH40KDPBF Series 1200 V 15 | 1493 | 0 |
|
|
|
IRG4PC40SPBF Mfr: infineon |
1250 | 0 |
|
||
|
IRG4PC50WPBF Mfr: infineon |
IRG4PC50WPbF Series 600 V 27 A | 1250 | 0 |
|
|
|
STGW20NC60VD Mfr: st microelectronics |
Insulated Gate Bipolar Transistor, 60A I(C),600VV(BR)CES, N-Channel, TO-247 | 1230 | 0 |
|
|
|
IRG4PC40KDPBF Mfr: infineon |
IRG4PC40KDPBF SERIES 600 25 A V N-CHANNEL ULTRAFASTIGBT - TO-247AC | 1125 | 0 |
|
|
|
IRG4PC40WPBF Mfr: infineon |
IRG4PC40 Series 600 V 20 A N-C | 903 | 0 |
|
|
|
STGIPL14K60 Mfr: st microelectronics |
Ceramic Capacitor, Multilayer, Ceramic,50V,5%+Tol,5% -Tol, C0G, 30ppm/Cel TC,0.015uF,SurfaceMount,0805 | 900 | 0 |
|
|
|
STGP10NC60KD Mfr: st microelectronics |
STGP10NC60K Series 600 V 10 A | 856 | 0 |
|
|
|
STGE200NB60S Mfr: st microelectronics |
STGE200NB60S Series N-Channel | 710 | 0 |
|
|
|
IRG4PH50UDPBF Mfr: infineon |
Insulated Gate Bipolar Transis | 704 | 0 |
|
|
|
STGP14NC60KD Mfr: st microelectronics |
"InsulatedGateBipolarTransistor,20AI(C),600VV(BR)CES,N-Channel,TO-220AB" | 700 | 0 |
|
|
|
IRG4PC40SPBF Mfr: infineon |
Insulated Gate Bipolar Transis | 671 | 0 |
|
|
|
STGP7NC60HD Mfr: st microelectronics |
Insulated Gate Bipolar Transistor, 25AI(C),600VV(BR)CES, N-Channel, TO-220AB | 662 | 0 |
|
|
|
STGFW20V60F Mfr: st microelectronics |
Microcontroller, 16-Bit, ST10 CPU,25MHz,CMOS,PQFP144 | 600 | 0 |
|
|
|
IRG4PC40UDPBF Mfr: infineon |
575 | 0 |
|
||
|
IRGP20B60PDPBF Mfr: infineon |
Power Field-Effect Transistor, 31A I(D),200V,0.082ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET | 566 | 0 |
|
|
|
STGP30H60DFB Mfr: st microelectronics |
HB Series 600 V 30 A Flange Mo | 497 | 0 |
|
|
|
STGW30H65FB Mfr: st microelectronics |
480 | 0 |
|
||
|
STGWA30H65FB Mfr: st microelectronics |
Insulated Gate Bipolar Transistor,40AI(C),N-Channel | 480 | 0 |
|
|
|
STGWA30M65DF2 Mfr: st microelectronics |
Insulated Gate Bipolar Transis | 480 | 0 |
|
|
|
IRG4PH40KDPBF Mfr: infineon |
Power Field-Effect Transistor, 49A I(D), 55V,0.0175ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 450 | 0 |
|
|
|
IRG4BC40SPBF Mfr: infineon |
Insulated Gate Bipolar Transistor, 60AI(C),600VV(BR)CES, N-Channel, TO-220AB | 340 | 0 |
|
|
|
STGP10NC60HD Mfr: st microelectronics |
JANTX Series 80 V 1 mA Through HoleNPNSiliconTransistor - TO-18 | 300 | 0 |
|
|
|
STGW40H65DFB Mfr: st microelectronics |
300 | 0 |
|
||
|
STGW30NC120HD Mfr: st microelectronics |
4 Quadrant Logic LevelTRIAC,600VV(DRM),4AI(T)RMS,TO-220AB | 290 | 0 |
|
|
|
IRGP4066D-EPBF Mfr: infineon |
275 | 0 |
|
||
|
IRG4PF50WPBF Mfr: infineon |
255 | 0 |
|
||
|
STGWA60V60DF Mfr: st microelectronics |
AC MOTOR CONTROLLER, 3A, PDIP26 | 240 | 0 |
|
|
|
STGWT30H65FB Mfr: st microelectronics |
InsulatedGateBipolarTransistor,25AI(C),600VV(BR)CES,N-Channel,TO-220AB | 240 | 0 |
|
|
|
STGWT40H65FB Mfr: st microelectronics |
InsulatedGateBipolarTransistor,25AI(C),600VV(BR)CES,N-Channel,TO-220AB | 240 | 0 |
|
|
|
IRG4PH40UPBF Mfr: infineon |
IRG4PH40U Series 1200 V 21 A N | 200 | 0 |
|
|
|
IRG4PC50UPBF Mfr: infineon |
Buffer/Inverter Based Peripheral Driver | 181 | 0 |
|
|
|
IRG4PC40UDPBF Mfr: infineon |
IRG4PC40U Series 600 V 20 A N- | 109 | 0 |
|
|
|
A2C35S12M3 Mfr: st microelectronics |
600W20VBi-DirectionalSurfaceMountTransientVoltageSuppressor Diode | 90 | 0 |
|
|
|
STGIPL14K60 Mfr: st microelectronics |
60 | 0 |
|
||
|
AUIRGP4062D Mfr: infineon |
Power Field-EffectTransistor,4 | 19 | 0 |
|
|
|
2MBI800VG-120P-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 18 | 49 | 16 |
|
|
1MBI1600U4C-120 Mfr: fuji |
Insulated GateBipolarTransistor,1600AI(C),1200VV(BR)CES,N-Channel | 5 | 0 | 12 |
|
|
2MBI1400VXB-120P-50-E Mfr: fuji |
IGBT HPM | 3 | 0 | 12 |
|
|
2MBI900VXA-120E-50-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 3 | 0 | 12 |
|
|
2MBI900VXA-120P-50 Mfr: fuji |
IGBT HPM | 1 | 0 | 12 |
|
|
IRG4PC40KDPBF Mfr: international rectifier corp |
Insulated Gate Bipolar Transistor, 42AI(C),600VV(BR)CES, N-Channel, TO-247AC | 1 | 0 |
|
|
|
12MBI100VN-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
12MBI100VX-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
12MBI50VN-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
12MBI50VX-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
12MBI75VN-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
12MBI75VX-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBH50D-060 Mfr: fuji |
Insulated GateBipolarTransistor,82AI(C),600VV(BR)CES, N-Channel | 0 | 0 |
|
|
|
1MBH50D-060S Mfr: fuji |
75A, 600V, N-CHANNEL IGBT | 0 | 0 | 16 |
|
|
1MBI1000UG-330-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1000VXB-170EH-50-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1000VXB-170EH-54-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1000VXB-170EL-50-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1000VXB-170EL-54-E Mfr: fuji |
Insulated Gate Bipolar Transistor,1400AI(C),1700VV(BR)CES, N-Channel | 0 | 0 | 16 |
|
|
1MBI100U4F-120L-50 Mfr: fuji |
IGBT | 0 | 0 | 16 |
|
|
1MBI1200VC-120P-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1200VC-170E-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1200VR-170E-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1400VXB-120PH-54-E Mfr: fuji |
Insulated Gate Bipolar Transistor,1800AI(C),1200VV(BR)CES, N-Channel | 0 | 0 | 16 |
|
|
1MBI1400VXB-120PL-54-E Mfr: fuji |
Insulated Gate Bipolar Transistor,1800AI(C),1200VV(BR)CES, N-Channel | 0 | 0 | 16 |
|
|
1MBI150VA-120L-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 12 |
|
|
1MBI1600VC-120P-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1600VC-170E-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1600VR-170E-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 99 |
|
|
1MBI200HH-120L-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI200U4H-120L-50 Mfr: fuji |
Insulated Gate Bipolar Transistor,300AI(C),1200VV(BR)CES | 0 | 0 | 16 |
|
|
1MBI2400U4D-170 Mfr: fuji |
3600A, 1700V, N-CHANNEL IGBT | 0 | 0 | 16 |
|
|
1MBI2400VC-120P-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI2400VD-120P-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI2400VD-170E-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI2400VR-170E-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI2400VS-170E-E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI300HH-120L-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI300U4-120 Mfr: fuji |
400A, 1200V, N-CHANNEL IGBT | 0 | 0 | 12 |
|