Manufacturer
Additional Feature
Case Connection
Collector Current-Max (IC)
Collector-emitter Voltage-Max
Configuration
Fall Time-Max (tf)
Gate-emitter Thr Voltage-Max
Gate-emitter Voltage-Max
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
Moisture Sensitivity Level
Number of Elements
Number of Terminals
Operating Temperature-Max
Package Body Material
Package Shape
Package Style
Peak Reflow Temperature (Cel)
Polarity/Channel Type
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Qualification Status
Rise Time-Max (tr)
Sub Category
Surface Mount
Terminal Finish
Terminal Form
Terminal Position
Time@Peak Reflow Temperature-Max (s)
Transistor Application
Transistor Element Material
Turn-off Time-Nom (toff)
Turn-on Time-Nom (ton)
VCEsat-Max
Items per page:
| Part Number | Part Description | In Stock | On Order | Lead Time (weeks) | Price |
|---|---|---|---|---|---|
|
STGP6NC60HD Mfr: st microelectronics |
48050 | 0 |
|
||
|
STGD6NC60HDT4 Mfr: st microelectronics |
Power Field-Effect Transistor,14AI(D),550V,0.21ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-252 | 35000 | 0 |
|
|
|
IRGP4066D-EPBF Mfr: infineon |
Power Field-Effect Transistor, 75A I(D),75V,0.0045ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-263AB | 9550 | 0 |
|
|
|
TIG065E8-TL-H Mfr: on semiconductor |
9000 | 0 |
|
||
|
STGD10NC60HT4 Mfr: st microelectronics |
Insulated Gate Bipolar Transistor | 7500 | 0 |
|
|
|
STGD19N40LZ Mfr: st microelectronics |
7500 | 0 |
|
||
|
STGF7NC60HD Mfr: st microelectronics |
Switching Regulator, 1.1A | 7200 | 0 |
|
|
|
IRG4PH30KDPBF Mfr: infineon |
PowerField-EffectTransistor,17AI(D),55V,0.07ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB | 6125 | 0 |
|
|
|
IRG4IBC30UDPBF Mfr: infineon |
Insulated Gate BipolarTransistor,60AI(C),600VV(BR)CES, N-Channel,TO-220AB | 5100 | 0 |
|
|
|
IRG4PH40KDPBF Mfr: infineon |
Power Field-Effect Transistor, 2.7AI(D),250V,3ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET,TO-251AA | 3350 | 0 |
|
|
|
IRG4PC40KDPBF Mfr: infineon |
PowerField-EffectTransistor,75AI(D),100V,0.01ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET | 3250 | 0 |
|
|
|
IRGP4069DPBF Mfr: infineon |
InsulatedGateBipolarTransistor,76AI(C),600VV(BR)CES,N-Channel,TO-247AC | 3250 | 0 |
|
|
|
IRG4PH50UPBF Mfr: infineon |
Buffer/Inverter Based Peripheral Driver | 3200 | 0 |
|
|
|
STGB10NB40LZT4 Mfr: st microelectronics |
SPDT, 1 Func, 1 Channel, CMOS | 3000 | 0 |
|
|
|
STGB18N40LZT4 Mfr: st microelectronics |
Power Field-Effect Transistor,N-Channel,Metal-oxide Semiconductor FET | 3000 | 0 |
|
|
|
STGB20N40LZ Mfr: st microelectronics |
3000 | 0 |
|
||
|
STGF10M65DF2 Mfr: st microelectronics |
RISC Microcontroller, 32-Bit, FLASH, 72MHz, CMOS | 3000 | 0 |
|
|
|
STGF20M65DF2 Mfr: st microelectronics |
Fixed Positive LDO Regulator, 3V, 0.6VDropout,PDSO4 | 3000 | 0 |
|
|
|
STGF6M65DF2 Mfr: st microelectronics |
Insulated Gate Bipolar Transistor | 3000 | 0 |
|
|
|
STGP8NC60KD Mfr: st microelectronics |
Insulated Gate Bipolar Transistor,40AI(C),N-Channel | 3000 | 0 |
|
|
|
STGP35HF60W Mfr: st microelectronics |
2400 | 0 |
|
||
|
STGE200NB60S Mfr: st microelectronics |
PowerField-EffectTransistor,N-Channel,Metal-oxideSemiconductor FET | 2370 | 0 |
|
|
|
STGW20NC60VD Mfr: st microelectronics |
PowerField-EffectTransistor,180AI(D),100V,0.0043ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB | 1920 | 0 |
|
|
|
STGW30NC60WD Mfr: st microelectronics |
PowerSupplySupportCircuit,Adjustable,1Channel,PDSO6 | 1800 | 0 |
|
|
|
STGW40V60F Mfr: st microelectronics |
1800 | 0 |
|
||
|
IRG4PC40UDPBF Mfr: infineon |
Insulated Gate Bipolar Transistor,60AI(C),600VV(BR)CES, N-Channel, TO-220AB | 1600 | 0 |
|
|
|
IRG4PC50WPBF Mfr: infineon |
PowerField-EffectTransistor,17AI(D),55V,0.07ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB | 1575 | 0 |
|
|
|
STGP10NC60KD Mfr: st microelectronics |
Power Field-Effect Transistor,3AI(D),800V,3.5ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-251AA | 1450 | 0 |
|
|
|
STGF14NC60KD Mfr: st microelectronics |
SwitchingRegulator,Current-mode,3A,1100kHzSwitchingFreq-Max, PDSO8 | 1400 | 0 |
|
|
|
STGIPL14K60 Mfr: st microelectronics |
STGIPL14K60 Series 600 V 15 A | 1180 | 0 |
|
|
|
STGP10NC60HD Mfr: st microelectronics |
1100 | 0 |
|
||
|
IRG4PC40WPBF Mfr: infineon |
IRG4PC40 Series 600 V 20 A N-C | 1050 | 0 |
|
|
|
IRGP20B60PDPBF Mfr: infineon |
Insulated Gate Bipolar Transistor,45AI(C),1200VV(BR)CES, N-Channel, TO-247AC | 950 | 0 |
|
|
|
STGFW20V60F Mfr: st microelectronics |
Insulated Gate Bipolar Transistor, 40AI(C),600VV(BR)CES, N-Channel, TO-263AB | 900 | 0 |
|
|
|
STGP30H65F Mfr: st microelectronics |
Insulated Gate Bipolar Transistor, 80AI(C),650VV(BR)CES, N-Channel | 750 | 0 |
|
|
|
STGW30H65FB Mfr: st microelectronics |
HB Series 650 V 30 A High Spee | 750 | 0 |
|
|
|
IKW50N60TFKSA1 Mfr: infineon |
PowerField-EffectTransistor,6.9AI(D),100V,0.026ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,MS-012AA | 720 | 0 |
|
|
|
IKW75N60TFKSA1 Mfr: infineon |
720 | 0 |
|
||
|
STGW30NC60VD Mfr: st microelectronics |
Power Field-Effect Transistor | 690 | 0 |
|
|
|
STGW30NC120HD Mfr: st microelectronics |
630 | 0 |
|
||
|
IRGP30B120KD-EP Mfr: infineon |
Insulated Gate BipolarTransistor,20AI(C),370VV(BR)CES, N-Channel,TO-220AB | 525 | 0 |
|
|
|
STGW25H120F2 Mfr: st microelectronics |
H Series 1200 V 50 A High Spee | 480 | 0 |
|
|
|
STGW40H65FB Mfr: st microelectronics |
HB Series 650 V 80 A High Spee | 480 | 0 |
|
|
|
STGW60V60F Mfr: st microelectronics |
Insulated Gate Bipolar Transistor,70AI(C),600VV(BR)CES, N-Channel, TO-247AC | 480 | 0 |
|
|
|
STGWA30M65DF2 Mfr: st microelectronics |
480 | 0 |
|
||
|
STGWT30H65FB Mfr: st microelectronics |
Insulated GateBipolarTransistor,80AI(C),650VV(BR)CES, N-Channel | 480 | 0 |
|
|
|
STGWT40H65FB Mfr: st microelectronics |
InsulatedGateBipolarTransistor,80AI(C),650VV(BR)CES,N-Channel | 480 | 0 |
|
|
|
STGWT60H65FB Mfr: st microelectronics |
Power Field-Effect Transistor | 480 | 0 |
|
|
|
STGY80H65DFB Mfr: st microelectronics |
Insulated Gate Bipolar Transistor,120AI(C),600VV(BR)CES, N-Channel | 480 | 0 |
|
|
|
IRG4PC50UPBF Mfr: infineon |
InsulatedGateBipolarTransistor,55AI(C),600VV(BR)CES,N-Channel,TO-247AC | 450 | 0 |
|
|
|
IRG4PH50KDPBF Mfr: infineon |
InsulatedGateBipolarTransistor,195AI(C),1200VV(BR)CES,N-Channel,TO-274AA | 300 | 0 |
|
|
|
STGP20V60F Mfr: st microelectronics |
Microcontroller, 32-Bit, FLASH, CORTEX-M3CPU,24MHz,CMOS, PQFP100 | 270 | 0 |
|
|
|
STGP30H60DF Mfr: st microelectronics |
270 | 0 |
|
||
|
STGP40V60F Mfr: st microelectronics |
Stepper Motor Controller, 5.6A, BCDMOS, PDSO24 | 267 | 0 |
|
|
|
STGB7H60DF Mfr: st microelectronics |
RISC Microcontroller, 32-Bit, FLASH, 32MHz,CMOS,PQFP48 | 263 | 0 |
|
|
|
IRG4PH40UPBF Mfr: infineon |
IRG4PH40U Series 1200 V 21 A N | 200 | 0 |
|
|
|
STGF3NC120HD Mfr: st microelectronics |
Insulated Gate Bipolar Transistor | 200 | 0 |
|
|
|
STGW30H60DFB Mfr: st microelectronics |
PowerSupplySupportCircuit,Fixed,1Channel,2.88VV,PDSO3 | 180 | 0 |
|
|
|
STGW60H65FB Mfr: st microelectronics |
Insulated Gate Bipolar Transistor | 180 | 0 |
|
|
|
STGW20V60DF Mfr: st microelectronics |
162 | 0 |
|
||
|
STGW60H60DLFB Mfr: st microelectronics |
Power Field-Effect Transistor | 162 | 0 |
|
|
|
STGW40H65DFB-4 Mfr: st microelectronics |
Insulated Gate Bipolar Transistor | 150 | 0 |
|
|
|
STGF20H60DF Mfr: st microelectronics |
Insulated Gate Bipolar Transistor | 108 | 0 |
|
|
|
STGF15H60DF Mfr: st microelectronics |
Power Field-Effect Transistor | 102 | 0 |
|
|
|
A2C35S12M3 Mfr: st microelectronics |
BusDriver,LVC/LCX/ZSeries,1-Func,8-Bit,TrueOutput,CMOS,PDSO20 | 90 | 0 |
|
|
|
STGWT80H65DFB Mfr: st microelectronics |
Power Field-Effect Transistor,7.2AI(D),500V,0.85ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB | 90 | 0 |
|
|
|
STGF15M65DF2 Mfr: st microelectronics |
Insulated Gate BipolarTransistor,25AI(C),600VV(BR)CES, N-Channel,TO-252AA | 81 | 0 |
|
|
|
STGW60H65DFB-4 Mfr: st microelectronics |
Power Field-EffectTransistor,N-Channel,Metal-oxideSemiconductor FET | 80 | 0 |
|
|
|
STGW80V60DF Mfr: st microelectronics |
Insulated Gate Bipolar Transistor,40AI(C),N-Channel | 49 | 0 |
|
|
|
STGWT30H60DFB Mfr: st microelectronics |
38 | 0 |
|
||
|
STGP30M65DF2 Mfr: st microelectronics |
AC Motor Controller, 40A, Hybrid | 22 | 0 |
|
|
|
1MBI1600U4C-120 Mfr: fuji |
Insulated Gate Bipolar Transistor, 1600AI(C),1200VV(BR)CES, N-Channel | 5 | 0 | 12 |
|
|
2MBI1400VXB-120P-50 Mfr: fuji |
IGBT HPM | 3 | 0 | 12 |
|
|
2MBI900VXA-120E-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 3 | 0 | 12 |
|
|
2MBI900VXA-120P-50 Mfr: fuji |
IGBT HPM | 2 | 0 | 12 |
|
|
IRG4PC40KDPBF Mfr: ir |
Insulated Gate Bipolar Transistor, 42AI(C),600VV(BR)CES, N-Channel, TO-247AC | 1 | 0 |
|
|
|
12MBI100VN-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
12MBI100VX-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
12MBI50VN-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
12MBI50VX-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
12MBI75VN-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
12MBI75VX-120-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBH50D-060 Mfr: fuji |
Insulated Gate Bipolar Transistor, 82AI(C),600VV(BR)CES, N-Channel | 0 | 0 |
|
|
|
1MBH50D-060S Mfr: fuji |
75A, 600V, N-CHANNEL IGBT | 0 | 0 | 16 |
|
|
1MBI1000UG-330 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1000VXB-170EH-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1000VXB-170EH-54 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1000VXB-170EL-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1000VXB-170EL-54 Mfr: fuji |
Insulated Gate Bipolar Transistor, 1400A I(C),1700V V(BR)CES, N-Channel | 0 | 0 | 16 |
|
|
1MBI100U4F-120L-50 Mfr: fuji |
IGBT | 0 | 0 | 16 |
|
|
1MBI1200VC-120P Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1200VC-170E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 4 | 16 |
|
|
1MBI1200VR-170E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 4 | 16 |
|
|
1MBI1400VXB-120PH-54 Mfr: fuji |
Insulated Gate Bipolar Transistor, 1800A I(C),1200V V(BR)CES, N-Channel | 0 | 0 | 16 |
|
|
1MBI1400VXB-120PL-54 Mfr: fuji |
Insulated Gate Bipolar Transistor, 1800A I(C),1200V V(BR)CES, N-Channel | 0 | 0 | 16 |
|
|
1MBI150VA-120L-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 12 |
|
|
1MBI1600VC-120P Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1600VC-170E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI1600VR-170E Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|
|
1MBI200HH-120L-50 Mfr: fuji |
Insulated Gate Bipolar Transistor | 0 | 0 | 16 |
|