0
Company
|
Linecard
|
PRODUCTS
|
Services
|
Contact US
MY ACCOUNT
SIGN IN
MY ACCOUNT
Semiconductors > Transistors > RF Power Bipolar Transistors
1 Product
Showing 1 - 1
Filter Options
Items per page
100
500
1000
5000
ALL
Manufacturer
NXP
Additional Feature
HIGH RELIABILITY
Case Connection
COLLECTOR
Collector Current-Max (IC)
.5
Collector-base Capacitance-Max
6
Collector-emitter Voltage-Max
10
Configuration
SINGLE
DC Current Gain-Min (hFE)
25
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
IHS ObjectID
1814352935
8317405608
JESD-30 Code
R-PDSO-G4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
4
Operating Temperature-Max
175
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
NPN
Power Dissipation Ambient-Max
2
Power Dissipation-Max (Abs)
2
Power Gain-Min (Gp)
10
Qualification Status
Not Qualified
Sub Category
Other Transistors
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
40
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Part Number
Description
In Stock
MRF13750HR5
Mfr: nxp
MRF13750H Series 105 V 10 µA 20.6 dB RF Power LDMOS Transistor - NI-1230H-4S
0