Semiconductors > Transistors > RF Power Bipolar Transistors

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Additional Feature
Case Connection
Collector Current-Max (IC)
Collector-base Capacitance-Max
Collector-emitter Voltage-Max
DC Current Gain-Min (hFE)
Highest Frequency Band
IHS ObjectID
JESD-30 Code
JESD-609 Code
Moisture Sensitivity Level
Number of Elements
Number of Terminals
Operating Temperature-Max
Package Body Material
Package Shape
Package Style
Peak Reflow Temperature (Cel)
Polarity/Channel Type
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Power Gain-Min (Gp)
Qualification Status
Sub Category
Surface Mount
Terminal Finish
Terminal Form
Terminal Position
Time@Peak Reflow Temperature-Max (s)
Transistor Application
Transistor Element Material
Part Number Description In Stock  
Mfr: nxp
MRF13750H Series 105 V 10 µA 20.6 dB RF Power LDMOS Transistor - NI-1230H-4S 0 Buy Now!