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Semiconductors > Transistors > RF Power Field-Effect Transistors
23 Products
Showing 1 - 23
Filter Options
Items per page
100
500
1000
5000
ALL
Manufacturer
CREE
IXYS
NXP
ST MICROELECTRONICS
Additional Feature
HIGH RELIABILITY
Case Connection
ISOLATED
SOURCE
Configuration
COMMON SOURCE, 2 ELEMENTS
Single
Drain Current-Max (Abs) (ID)
1
12
2
2.5
20
4
5
6
7
9
Drain Current-Max (ID)
1
12
2
2.5
4
5
6
7
9
DS Breakdown Voltage-Min
1000
110
125
130
40
65
66
70
80
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
VERY HIGH FREQUENCY BAND
IHS ObjectID
1535859583
1536606722
1605222220
1660403277
1716008493
1807594986
1877403796
1938493165
1958607763
2020917972
2080532361
2082350588
2090388353
2139165328
2139165332
4000158927
4000159004
4000159035
4000159038
4000159061
4000159062
4000159068
4000159132
4000159134
4000159147
4000159176
4000159177
4000159207
8055139269
8184000801
8184000802
8192015002
JEDEC-95 Code
TO-270AA
JESD-30 Code
O-PRFM-F4
R-CDFM-F4
R-PDFM-F2
R-PDSO-F6
R-PDSO-G2
R-PSSO-F3
S-PQCC-N5
JESD-609 Code
e3
Moisture Sensitivity Level
1
3
NOT APPLICABLE
Number of Elements
1
2
Number of Terminals
2
3
4
5
6
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150
165
175
200
225
Package Body Material
CERAMIC, METAL-SEALED COFIRED
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
SQUARE
Package Style
CHIP CARRIER
FLANGE MOUNT
SMALL OUTLINE
Peak Reflow Temperature (Cel)
250
260
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
.079
108
1300
14
1670
175
182
20
294
302
31.7
389
52.8
6
690
73
74
79
940
Qualification Status
Not Qualified
Sub Category
FET General Purpose Power
FET General Purpose Powers
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
Matte Tin (Sn) - annealed
TIN
Tin (Sn)
Terminal Form
FLAT
GULL WING
NO LEAD
Terminal Position
DUAL
QUAD
RADIAL
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
40
NOT SPECIFIED
Transistor Application
AMPLIFIER
SWITCHING
Transistor Element Material
SILICON
Part Number
Description
In Stock
AFT05MS004NT1
Mfr: nxp
AFT05MSx Series 30 V 520 MHz N-Channel RF Power LDMOS Transistor - SOT-89-3
0
AFT05MS031NR1
Mfr: nxp
AFT05MSx Series 40 V 520 MHz N-Channel RF Power LDMOS Transistor - TO-270-2
0
AFT09MS007NT1
Mfr: nxp
AFT09MSx Series 30 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2
0
CGHV1F025S
Mfr: cree
RF Power Field-Effect Transistor
0
DE375-102N12A
Mfr: ixys
RF Power Field-Effect Transistor, 1-Element, VeryHigh Frequency Band, Silicon, N-Channel,Metal-oxide Semiconductor FET
0
MRF374A
Mfr: nxp
RF Power Field-Effect Transistor,2-Element,UltraHigh Frequency Band,Silicon,N-Channel,Metal-oxide Semiconductor FET
0
MRF6V2010NR1
Mfr: nxp
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
0
MRF6V2010NR1
Mfr: nxp
TO270-2/10-450 MHZ, 10 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETS
0
MRF6V2010NR1
Mfr: nxp
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
0
MRFE6S9060NR1
Mfr: nxp
N-Channel 66 V 14 W Enhancement Mode Lateral Mosfet - TO-270
0
MRFE6VP5600HR5
Mfr: nxp
MRFE6VPx Series 130 V 230 MHz RF Power Field Effect Transistor - NI-1230
0
MRFE6VP61K25HR5
Mfr: nxp
MRFE6VP6x Series 133 V RF 230 MHz Dual Channel Power LDMOS Transistor - NI-1230
0
MRFE6VP61K25HR5
Mfr: nxp
MRFE6VP6x Series 133 V RF 230 MHz Dual Channel Power LDMOS Transistor - NI-1230
0
MRFE6VP61K25NR6
Mfr: nxp
OM-1230-4/Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
0
MRFE6VS25GNR1
Mfr: nxp
MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL
0
PD55003L-E
Mfr: st microelectronics
PD55003L-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWER FLAT
0
PD55003L-E
Mfr: st microelectronics
PD55003L-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWER FLAT
0
PD55008TR-E
Mfr: st microelectronics
RF Power Field-Effect Transistor,1-Element,UltraHigh Frequency Band,Silicon,N-Channel,Metal-oxide Semiconductor FET
0
PD55015-E
Mfr: st microelectronics
POWERSO 10/15W 500MHZ 12V RF LD
0
PD57018-E
Mfr: st microelectronics
PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
0
PD57030-E
Mfr: st microelectronics
N-Channel 65 V Formed Leads Enhancement Mode Lateral Mosfet - POWERSO-10RF
0
SD57030
Mfr: st microelectronics
RF Power Field-Effect Transistor,1-Element,UltraHigh Frequency Band,Silicon,N-Channel,Metal-oxide Semiconductor FET
0
SD57030
Mfr: st microelectronics
30W 945MHZ 28V LDMOS
0