Semiconductors > Transistors > RF Power Field-Effect Transistors

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Manufacturer CREE IXYS NXP ST MICROELECTRONICS

Additional Feature HIGH RELIABILITY

Case Connection ISOLATED SOURCE

Configuration COMMON SOURCE, 2 ELEMENTS Single

Drain Current-Max (ID) 1 12 2 2.5 4 5 6 7 9

DS Breakdown Voltage-Min 1000 110 125 130 40 65 66 70 80

FET Technology METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band ULTRA HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND

JEDEC-95 Code TO-270AA

JESD-30 Code O-PRFM-F4 R-CDFM-F4 R-PDFM-F2 R-PDSO-F6 R-PDSO-G2 R-PSSO-F3 S-PQCC-N5

JESD-609 Code e3

Moisture Sensitivity Level 1 3 NOT APPLICABLE

Number of Elements 1 2

Number of Terminals 2 3 4 5 6

Operating Mode ENHANCEMENT MODE

Operating Temperature-Max 150 165 175 200 225

Package Body Material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY

Package Shape RECTANGULAR ROUND SQUARE

Package Style CHIP CARRIER FLANGE MOUNT SMALL OUTLINE

Peak Reflow Temperature (Cel) 250 260 NOT SPECIFIED

Polarity/Channel Type N-CHANNEL

Qualification Status Not Qualified

Sub Category FET General Purpose Power FET General Purpose Powers

Surface Mount NO YES

Terminal Finish MATTE TIN Matte Tin (Sn) - annealed TIN Tin (Sn)

Terminal Form FLAT GULL WING NO LEAD

Terminal Position DUAL QUAD RADIAL SINGLE

Time@Peak Reflow Temperature-Max (s) 30 40 NOT SPECIFIED

Transistor Application AMPLIFIER SWITCHING

Transistor Element Material SILICON

Part Number	Description	In Stock
AFT05MS004NT1 Mfr: nxp	AFT05MSx Series 30 V 520 MHz N-Channel RF Power LDMOS Transistor - SOT-89-3	0
AFT05MS031NR1 Mfr: nxp	AFT05MSx Series 40 V 520 MHz N-Channel RF Power LDMOS Transistor - TO-270-2	0
AFT09MS007NT1 Mfr: nxp	AFT09MSx Series 30 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2	0
CGHV1F025S Mfr: cree	RF Power Field-Effect Transistor	0
DE375-102N12A Mfr: ixys	RF Power Field-Effect Transistor, 1-Element, VeryHigh Frequency Band, Silicon, N-Channel,Metal-oxide Semiconductor FET	0
MRF374A Mfr: nxp	RF Power Field-Effect Transistor,2-Element,UltraHigh Frequency Band,Silicon,N-Channel,Metal-oxide Semiconductor FET	0
MRF6V2010NR1 Mfr: nxp	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	0
MRF6V2010NR1 Mfr: nxp	TO270-2/10-450 MHZ, 10 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETS	0
MRF6V2010NR1 Mfr: nxp	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	0
MRFE6S9060NR1 Mfr: nxp	N-Channel 66 V 14 W Enhancement Mode Lateral Mosfet - TO-270	0
MRFE6VP5600HR5 Mfr: nxp	MRFE6VPx Series 130 V 230 MHz RF Power Field Effect Transistor - NI-1230	0
MRFE6VP61K25HR5 Mfr: nxp	MRFE6VP6x Series 133 V RF 230 MHz Dual Channel Power LDMOS Transistor - NI-1230	0
MRFE6VP61K25HR5 Mfr: nxp	MRFE6VP6x Series 133 V RF 230 MHz Dual Channel Power LDMOS Transistor - NI-1230	0
MRFE6VP61K25NR6 Mfr: nxp	OM-1230-4/Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V	0
MRFE6VS25GNR1 Mfr: nxp	MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL	0
PD55003L-E Mfr: st microelectronics	PD55003L-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWER FLAT	0
PD55003L-E Mfr: st microelectronics	PD55003L-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWER FLAT	0
PD55008TR-E Mfr: st microelectronics	RF Power Field-Effect Transistor,1-Element,UltraHigh Frequency Band,Silicon,N-Channel,Metal-oxide Semiconductor FET	0
PD55015-E Mfr: st microelectronics	POWERSO 10/15W 500MHZ 12V RF LD	0
PD57018-E Mfr: st microelectronics	PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF	0
PD57030-E Mfr: st microelectronics	N-Channel 65 V Formed Leads Enhancement Mode Lateral Mosfet - POWERSO-10RF	0
SD57030 Mfr: st microelectronics	RF Power Field-Effect Transistor,1-Element,UltraHigh Frequency Band,Silicon,N-Channel,Metal-oxide Semiconductor FET	0
SD57030 Mfr: st microelectronics	30W 945MHZ 28V LDMOS	0