Semiconductors > Transistors > Small Signal Bipolar Transisto

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Case Connection COLLECTOR

Collector-base Capacitance-Max 25 3.5 4 5 6 8

Configuration COMPLEX CURRENT MIRROR DARLINGTON DARLINGTON WITH BUILT-IN DIODE AND RESISTOR SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SINGLE SINGLE WITH BUILT-IN RESISTOR

JEDEC-95 Code TO-18 TO-236 TO-236AB TO-237AA TO-243AA TO-263AB TO-39 TO-92

JESD-609 Code e0 e1 e3 e4 e6

Moisture Sensitivity Level 1 3 NOT APPLICABLE

Number of Elements 1 2 7

Number of Terminals 16 3 4 5 6

Operating Temperature-Max 125 150 175 200

Package Body Material METAL PLASTIC/EPOXY

Package Shape RECTANGULAR ROUND

Package Style CHIP CARRIER CYLINDRICAL IN-LINE SMALL OUTLINE

Peak Reflow Temperature (Cel) 235 240 260 NOT APPLICABLE NOT SPECIFIED

Polarity/Channel Type NPN NPN AND PNP NPN/PNP PNP

Power Dissipation Ambient-Max .25 1.5 1.8 10 3

Qualification Status Not Qualified

Reference Standard AEC-Q101 AEC-Q101; IEC-60134 CECC IEC-134 IEC-60134

Sub Category BIP General Purpose Small Signal Other Transistors

Surface Mount NO YES

Terminal Form FLAT GULL WING NO LEAD THROUGH-HOLE WIRE

Terminal Position BOTTOM DUAL SINGLE

Time@Peak Reflow Temperature-Max (s) 10 30 40 NOT APPLICABLE NOT SPECIFIED

Transistor Application AMPLIFIER SWITCHING

Transistor Element Material SILICON

Part Number	Description	In Stock
P2N2907A Mfr: on semiconductor	Small Signal Bipolar Transistor,0.6AI(C),60VV(BR)CEO, 1-Element, PNP, Silicon,TO-92	0