Products by semiq

Part Number	Description	In Stock
GHXS010A060S-D3 Mfr: semiq	GHXS010A060S-D3 is a Gen 3, 600V, 10A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS015A120S-D1 Mfr: semiq	GHXS015A120S-D1 is a Gen 3, 1200V, 15A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS015A120S-D3 Mfr: semiq	GHXS015A120S-D3 is a Gen 3, 1200V, 15A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS020A060S-D3 Mfr: semiq	GHXS020A060S-D3 is a Gen 3, 600V, 20A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS030A060S-D1E Mfr: semiq	GHXS030A060S-D1E is a Gen 3, 600V, 30A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS030A060S-D3 Mfr: semiq	GHXS030A060S-D3 is a Gen 3, 600V, 30A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS030A120S-D1E Mfr: semiq	GHXS030A120S-D1E is a Gen 3, 1200V, 30A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS030A120S-D3 Mfr: semiq	GHXS030A120S-D3 is a Gen 3, 1200V, 30A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS045A120S-D3 Mfr: semiq	GHXS045A120S-D3 is a Gen 3, 1200V, 45A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS050A060S-D3 Mfr: semiq	GHXS050A060S-D3 is a Gen 3, 600V, 50A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS050B065S-D3 Mfr: semiq	GHXS050B065S-D3 is a Gen 3, 650V, 50A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS050B120S-D3 Mfr: semiq	GHXS050B120S-D3 is a Gen 3, 1200V, 50A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS050B170S-D3 Mfr: semiq	GHXS050B170S-D3 is a Gen 3, 1700V, 50A, SOT-227 SiC Schottky diode module from SemiQ. Features SiC Schottky Diode – Zero reverse recovery – Zero forward recovery – Temperature independent switching behavior – Positive temperature coefficient on VF • Low stray inductance • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS060A120S-D3 Mfr: semiq	GHXS060A120S-D3 is a Gen 3, 1200V, 60A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS100B065S-D3 Mfr: semiq	GHXS100B065S-D3 is a Gen 3, 650V, 100A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS100B120S-D3 Mfr: semiq	GHXS100B120S-D3 is a Gen 3, 1200V, 100A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS100B170S-D3 Mfr: semiq	GHXS100B170S-D3 is a Gen 3, 1700V, 100A, SOT-227 SiC Schottky diode module from SemiQ. Features – Zero reverse recovery – Zero forward recovery – Temperature independent switching behavior – Positive temperature coefficient on VF • Low stray inductance • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS300A120S7D5 Mfr: semiq	GHXS300A120S7D5 is a Gen 3, 1200V, 300A, S7 Half Bridge SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GHXS400A120S7D5 Mfr: semiq	GHXS400A120S7D5 is a Gen 3, 1200V, 400A, S7 Half Bridge SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D005A170B Mfr: semiq	GP3D005A170B is a Gen 3, 1700V, 5A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D006A065A Mfr: semiq	GP3D006A065A is a Gen 3, 650V, 6A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D006A065F Mfr: semiq	GP3D006A065F is a Gen 3, 650V, 6A, TO-220-2L-FP SiC Schottky diode from SemiQ. Amp+ TM Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ* • All parts tested to greater than 715V • Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D008A065A Mfr: semiq	GP3D008A065A is a Gen 3, 650V, 8A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D008A065D Mfr: semiq	GP3D008A065D is a Gen 3, 650V, 8A, TO-263-2L (D2PAK) SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D008A065F Mfr: semiq	GP3D008A065F is a Gen 3, 650V, 8A, TO-220-2L-FP SiC Schottky diode from SemiQ. Amp+ TM Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ* • All parts tested to greater than 715V • Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D010A065A Mfr: semiq	GP3D010A065A is a Gen 3, 650V, 10A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D010A065B Mfr: semiq	GP3D010A065B is a Gen 3, 650V, 10A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D010A065D Mfr: semiq	GP3D010A065D is a Gen 3, 650V, 10A, TO-263-2L (D2PAK) SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D010A120A Mfr: semiq	GP3D010A120A is a Gen 3, 1200V, 10A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D010A120B Mfr: semiq	GP3D010A120B is a Gen 3, 1200V, 10A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D010A120S Mfr: semiq	GP3D010A120S is a Gen 3, 1200V, 10A, DO-214AB SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D010A170B Mfr: semiq	GP3D010A170B is a Gen 3, 1700V, 10A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D012A065A Mfr: semiq	GP3D012A065A is a Gen 3, 650V, 12A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D012A065B Mfr: semiq	GP3D012A065B is a Gen 3, 650V, 12A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D015A120A Mfr: semiq	GP3D015A120A is a Gen 3, 1200V, 15A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D015A120B Mfr: semiq	GP3D015A120B is a Gen 3, 1200V, 15A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D016A065U Mfr: semiq	GP3D016A065U is a Gen 3, 650V, 16 (2 X 8), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D020A065A Mfr: semiq	GP3D020A065A is a Gen 3, 650V, 20A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D020A065B Mfr: semiq	GP3D020A065B is a Gen 3, 650V, 20A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D020A065U Mfr: semiq	GP3D020A065U is a Gen 3, 650V, 20 (2 x 10), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D020A120A Mfr: semiq	GP3D020A120A is a Gen 3, 1200V, 20A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D020A120B Mfr: semiq	GP3D020A120B is a Gen 3, 1200V, 20A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D020A120U Mfr: semiq	GP3D020A120U is a Gen 3, 1200V, 20 (2 x 10), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D020A170B Mfr: semiq	GP3D020A170B is a Gen 3, 1700V, 20A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D024A065U Mfr: semiq	GP3D024A065U is a Gen 3, 650V, 24 (2 x 12), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D030A065B Mfr: semiq	GP3D030A065B is a Gen 3, 650V, 30A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D030A120B Mfr: semiq	GP3D030A120B is a Gen 3, 1200V, 30A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D030A120U Mfr: semiq	GP3D030A120U is a Gen 3, 1200V, 30 (2 x 15), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D040A065U Mfr: semiq	GP3D040A065U is a Gen 3, 650V, 40 (2 x 20), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D040A120U Mfr: semiq	GP3D040A120U is a Gen 3, 1200V, 40 (2 x 20), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D050A065B Mfr: semiq	GP3D050A065B is a Gen 3, 650V, 50A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D050A120B Mfr: semiq	GP3D050A120B is a Gen 3, 1200V, 50A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D050B170B Mfr: semiq	GP3D050B170B is a Gen 3, 1700V, 50A, TO-247-2L SiC Schottky diode from SemiQ. Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 1250mJ* • All parts tested to greater than 1,870… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
GP3D060A120U Mfr: semiq	GP3D060A120U is a Gen 3, 1200V, 60 (2 x 30), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.	0
AS2T030A170X Mfr: semiq	AS2T030A170X is a 1700V, 30mOHM RDS(on), TO-247-4L bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 The high-speed QSiC™ 1700 V switching planar D-MOSFETs enable more compact system designs at large scale… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
AS3T016A120X Mfr: semiq	AS3T016A120X is a 1200V, 16mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
AS3T040A120X Mfr: semiq	AS3T040A120X is a 1200V, 38mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP2T020A120X Mfr: semiq	GP2T020A120X is a 1200V, 18mOHM RDS(on), 4.53 x 6.65 mm bare-die SiC MOSFET from SemiQ. Features… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP2T030A170X Mfr: semiq	GP2T030A170X is a 1700V, 30mOHM RDS(on), TO-247-4L bare-die SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,900… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP2T040A120X Mfr: semiq	GP2T040A120X is a 1200V, 37mOHM RDS(on), 2.89 x 5.48 mm bare-die SiC MOSFET from SemiQ. Features… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP2T080A120X Mfr: semiq	GP2T080A120X is a 1200V, 77mOHM RDS(on), 2.83 x 2.83 mm bare-die SiC MOSFET from SemiQ. Features… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D005A170X Mfr: semiq	GP3D005A170X is a 1700V, 5A, 2.4 X 2.4mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D006A065X Mfr: semiq	GP3D006A065X is a 650V, 6A, 1.37 x 1.37 mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D008A065X Mfr: semiq	GP3D008A065X is a 650V, 8A, 1.54 X 1.54mm bare-die SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D010A065X Mfr: semiq	GP3D010A065X is a 650V, 10A, 1.78 x 1.78mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D010A120X Mfr: semiq	GP3D010A120X is a 1200V, 10A, 2.4 x 2.4xmm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D010A170X Mfr: semiq	GP3D010A170X is a 1700V, 10A, 2.91 x 2.91xmm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D012A065X Mfr: semiq	GP3D012A065X is a 650V, 12A, 1.5 x 2.9mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D015A120X Mfr: semiq	GP3D015A120X is a 1200V, 15A, 2.12 x 4.1mm bare-die SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D020A065X Mfr: semiq	GP3D020A065X is a 650V, 20A, 2.39 x 2.39mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D020A120X Mfr: semiq	GP3D020A120X is a 1200V, 20A, 3.25 x 3.25mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D020A170X Mfr: semiq	GP3D020A170X is a 1700V, 20A, 3.95 x 3.95xmm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D030A065X Mfr: semiq	GP3D030A065X is a 650V, 30A, 2.86 x 2.86mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D030A120X Mfr: semiq	GP3D030A120X is a 1200V, 30A, 3.9 x 3.9mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D050A065X Mfr: semiq	GP3D050A065X is a 650V, 50A, 3.50 x 3.50mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D050A120X Mfr: semiq	GP3D050A120X is a 1200V, 50A, 4.93 x 4.93mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3D050B170X Mfr: semiq	GP3D050B170X is a 1700V, 50A, Bare die bare-die SiC Schottky diode from SemiQ. Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • All parts tested to greater than 1870V… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3T014A120X Mfr: semiq	GP3T014A120X is a 1200V, 14mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • Lower capacitance • Higher system efficiency • Easy to parallel Applications • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3T016A120X Mfr: semiq	GP3T016A120X is a 1200V, 16mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3T017A120X Mfr: semiq	GP3T017A120X is a 1200V, 15mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • Lower capacitance • Higher system efficiency • Easy to parallel Applications • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3T020A120X Mfr: semiq	GP3T020A120X is a 1200V, 18mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features: • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3T034A120X Mfr: semiq	GP3T034A120X is a 1200V, 32mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • Lower capacitance • Higher system efficiency • Easy to parallel Applications • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3T040A120X Mfr: semiq	GP3T040A120X is a 1200V, 38mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3T072A120X Mfr: semiq	GP3T072A120X is a 1200V, 71mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • Lower capacitance • Higher system efficiency • Easy to parallel Applications • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
GP3T080A120X Mfr: semiq	GP3T080A120X is a 1200V, 80mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.	0
AS3T016A120H Mfr: semiq	AS3T016A120H is a Gen 3, 1200 V, 132 A, 16 mOHM, TO-247-4L SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
AS3T040A120H Mfr: semiq	AS3T040A120H is a Gen 3, 1200 V, 62 A, 38 mOHM, TO-247-4L SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
AS3T040A120T Mfr: semiq	AS3T040A120T is a Gen 3, 1200V, 65A, 38mOHM RDS(on), TCPAK SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving • Qualified for Automotive Applications… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS007C120S1-E1 Mfr: semiq	GCMS007C120S1-E1 is a Gen 3, 1200V, 189A, 7.3mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS008C120S1-E1 Mfr: semiq	GCMS008C120S1-E1 is a Gen 3, 1200V, 189A, 8.4mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS010B120S1-E1 Mfr: semiq	GCMS010B120S1-E1 is a Gen 2, 1200V, 204A, 9mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS014C120S1-E1 Mfr: semiq	GCMS014C120S1-E1 is a Gen 3, 1200V, 103A, 15.0mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS016C120S1-E1 Mfr: semiq	GCMS016C120S1-E1 is a Gen 3, 1200V, 103A, 16.5mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS020B120S1-E1 Mfr: semiq	GCMS020B120S1-E1 is a Gen 2, 1200V, 105A, 20mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS034C120S1-E1 Mfr: semiq	GCMS034C120S1-E1 is a Gen 3, 1200V, 53A, 34mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS040B120S1-E1 Mfr: semiq	GCMS040B120S1-E1 is a Gen 2, 1200V, 57A, 37mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including PFC Boost Converter, DC-DC Converter Primary Switching and Synchronous rectification. Combined with paralleled Silicon Carbide Schottky… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS040C120S1-E1 Mfr: semiq	GCMS040C120S1-E1 is a Gen 3, 1200V, 53A, 39mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS080B120S1-E1 Mfr: semiq	GCMS080B120S1-E1 is a Gen 2, 1200V, 30A, 77mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including PFC Boost Converter, DC-DC Converter Primary Switching and Synchronous rectification. Combined with paralleled Silicon Carbide Schottky… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS080C120S1-E1 Mfr: semiq	GCMS080C120S1-E1 is a Gen 3, 1200V, 28A, 84mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0
GCMS1P0B120S4B1 Mfr: semiq	GCMS1P0B120S4B1 is a Gen 3, 1200V, 1146A, 1.0mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.	0

GHXS010A060S-D3
Mfr: semiq

GHXS010A060S-D3 is a Gen 3, 600V, 10A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS015A120S-D1
Mfr: semiq

GHXS015A120S-D1 is a Gen 3, 1200V, 15A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS015A120S-D3
Mfr: semiq

GHXS015A120S-D3 is a Gen 3, 1200V, 15A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

0

GHXS020A060S-D3
Mfr: semiq

GHXS020A060S-D3 is a Gen 3, 600V, 20A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS030A060S-D1E
Mfr: semiq

GHXS030A060S-D1E is a Gen 3, 600V, 30A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

0

GHXS030A060S-D3
Mfr: semiq

GHXS030A060S-D3 is a Gen 3, 600V, 30A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

0

GHXS030A120S-D1E
Mfr: semiq

GHXS030A120S-D1E is a Gen 3, 1200V, 30A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

0

GHXS030A120S-D3
Mfr: semiq

GHXS030A120S-D3 is a Gen 3, 1200V, 30A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS045A120S-D3
Mfr: semiq

GHXS045A120S-D3 is a Gen 3, 1200V, 45A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS050A060S-D3
Mfr: semiq

GHXS050A060S-D3 is a Gen 3, 600V, 50A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

0

GHXS050B065S-D3
Mfr: semiq

GHXS050B065S-D3 is a Gen 3, 650V, 50A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS050B120S-D3
Mfr: semiq

GHXS050B120S-D3 is a Gen 3, 1200V, 50A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS050B170S-D3
Mfr: semiq

GHXS050B170S-D3 is a Gen 3, 1700V, 50A, SOT-227 SiC Schottky diode module from SemiQ. Features SiC Schottky Diode – Zero reverse recovery – Zero forward recovery – Temperature independent switching behavior – Positive temperature coefficient on VF • Low stray inductance • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS060A120S-D3
Mfr: semiq

GHXS060A120S-D3 is a Gen 3, 1200V, 60A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS100B065S-D3
Mfr: semiq

GHXS100B065S-D3 is a Gen 3, 650V, 100A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS100B120S-D3
Mfr: semiq

GHXS100B120S-D3 is a Gen 3, 1200V, 100A, SOT-227 SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS100B170S-D3
Mfr: semiq

GHXS100B170S-D3 is a Gen 3, 1700V, 100A, SOT-227 SiC Schottky diode module from SemiQ. Features – Zero reverse recovery – Zero forward recovery – Temperature independent switching behavior – Positive temperature coefficient on VF • Low stray inductance • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS300A120S7D5
Mfr: semiq

GHXS300A120S7D5 is a Gen 3, 1200V, 300A, S7 Half Bridge SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GHXS400A120S7D5
Mfr: semiq

GHXS400A120S7D5 is a Gen 3, 1200V, 400A, S7 Half Bridge SiC Schottky diode module from SemiQ. SemiQ SiC Schottky Diode Modules enhance performance with the latest SiC chip sets and minimized package parasitics. SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D005A170B
Mfr: semiq

GP3D005A170B is a Gen 3, 1700V, 5A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D006A065A
Mfr: semiq

GP3D006A065A is a Gen 3, 650V, 6A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D006A065F
Mfr: semiq

GP3D006A065F is a Gen 3, 650V, 6A, TO-220-2L-FP SiC Schottky diode from SemiQ. Amp+ TM Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ* • All parts tested to greater than 715V • Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D008A065A
Mfr: semiq

GP3D008A065A is a Gen 3, 650V, 8A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D008A065D
Mfr: semiq

GP3D008A065D is a Gen 3, 650V, 8A, TO-263-2L (D2PAK) SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D008A065F
Mfr: semiq

GP3D008A065F is a Gen 3, 650V, 8A, TO-220-2L-FP SiC Schottky diode from SemiQ. Amp+ TM Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ* • All parts tested to greater than 715V • Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D010A065A
Mfr: semiq

GP3D010A065A is a Gen 3, 650V, 10A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D010A065B
Mfr: semiq

GP3D010A065B is a Gen 3, 650V, 10A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D010A065D
Mfr: semiq

GP3D010A065D is a Gen 3, 650V, 10A, TO-263-2L (D2PAK) SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D010A120A
Mfr: semiq

GP3D010A120A is a Gen 3, 1200V, 10A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D010A120B
Mfr: semiq

GP3D010A120B is a Gen 3, 1200V, 10A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D010A120S
Mfr: semiq

GP3D010A120S is a Gen 3, 1200V, 10A, DO-214AB SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D010A170B
Mfr: semiq

GP3D010A170B is a Gen 3, 1700V, 10A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D012A065A
Mfr: semiq

GP3D012A065A is a Gen 3, 650V, 12A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D012A065B
Mfr: semiq

GP3D012A065B is a Gen 3, 650V, 12A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D015A120A
Mfr: semiq

GP3D015A120A is a Gen 3, 1200V, 15A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D015A120B
Mfr: semiq

GP3D015A120B is a Gen 3, 1200V, 15A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D016A065U
Mfr: semiq

GP3D016A065U is a Gen 3, 650V, 16 (2 X 8), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D020A065A
Mfr: semiq

GP3D020A065A is a Gen 3, 650V, 20A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D020A065B
Mfr: semiq

GP3D020A065B is a Gen 3, 650V, 20A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D020A065U
Mfr: semiq

GP3D020A065U is a Gen 3, 650V, 20 (2 x 10), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D020A120A
Mfr: semiq

GP3D020A120A is a Gen 3, 1200V, 20A, TO-220-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D020A120B
Mfr: semiq

GP3D020A120B is a Gen 3, 1200V, 20A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D020A120U
Mfr: semiq

GP3D020A120U is a Gen 3, 1200V, 20 (2 x 10), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D020A170B
Mfr: semiq

GP3D020A170B is a Gen 3, 1700V, 20A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D024A065U
Mfr: semiq

GP3D024A065U is a Gen 3, 650V, 24 (2 x 12), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D030A065B
Mfr: semiq

GP3D030A065B is a Gen 3, 650V, 30A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D030A120B
Mfr: semiq

GP3D030A120B is a Gen 3, 1200V, 30A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D030A120U
Mfr: semiq

GP3D030A120U is a Gen 3, 1200V, 30 (2 x 15), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D040A065U
Mfr: semiq

GP3D040A065U is a Gen 3, 650V, 40 (2 x 20), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D040A120U
Mfr: semiq

GP3D040A120U is a Gen 3, 1200V, 40 (2 x 20), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D050A065B
Mfr: semiq

GP3D050A065B is a Gen 3, 650V, 50A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D050A120B
Mfr: semiq

GP3D050A120B is a Gen 3, 1200V, 50A, TO-247-2L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D050B170B
Mfr: semiq

GP3D050B170B is a Gen 3, 1700V, 50A, TO-247-2L SiC Schottky diode from SemiQ. Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 1250mJ* • All parts tested to greater than 1,870… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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GP3D060A120U
Mfr: semiq

GP3D060A120U is a Gen 3, 1200V, 60 (2 x 30), TO-247-3L SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… Its silicon carbide construction supports fast switching, low recovery loss, and efficient high-temperature power conversion.

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AS2T030A170X
Mfr: semiq

AS2T030A170X is a 1700V, 30mOHM RDS(on), TO-247-4L bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 The high-speed QSiC™ 1700 V switching planar D-MOSFETs enable more compact system designs at large scale… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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AS3T016A120X
Mfr: semiq

AS3T016A120X is a 1200V, 16mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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AS3T040A120X
Mfr: semiq

AS3T040A120X is a 1200V, 38mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP2T020A120X
Mfr: semiq

GP2T020A120X is a 1200V, 18mOHM RDS(on), 4.53 x 6.65 mm bare-die SiC MOSFET from SemiQ. Features… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP2T030A170X
Mfr: semiq

GP2T030A170X is a 1700V, 30mOHM RDS(on), TO-247-4L bare-die SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,900… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP2T040A120X
Mfr: semiq

GP2T040A120X is a 1200V, 37mOHM RDS(on), 2.89 x 5.48 mm bare-die SiC MOSFET from SemiQ. Features… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP2T080A120X
Mfr: semiq

GP2T080A120X is a 1200V, 77mOHM RDS(on), 2.83 x 2.83 mm bare-die SiC MOSFET from SemiQ. Features… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D005A170X
Mfr: semiq

GP3D005A170X is a 1700V, 5A, 2.4 X 2.4mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D006A065X
Mfr: semiq

GP3D006A065X is a 650V, 6A, 1.37 x 1.37 mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D008A065X
Mfr: semiq

GP3D008A065X is a 650V, 8A, 1.54 X 1.54mm bare-die SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D010A065X
Mfr: semiq

GP3D010A065X is a 650V, 10A, 1.78 x 1.78mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D010A120X
Mfr: semiq

GP3D010A120X is a 1200V, 10A, 2.4 x 2.4xmm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D010A170X
Mfr: semiq

GP3D010A170X is a 1700V, 10A, 2.91 x 2.91xmm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D012A065X
Mfr: semiq

GP3D012A065X is a 650V, 12A, 1.5 x 2.9mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D015A120X
Mfr: semiq

GP3D015A120X is a 1200V, 15A, 2.12 x 4.1mm bare-die SiC Schottky diode from SemiQ. SiC Schottky Diodes from SemiQ operate with near zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D020A065X
Mfr: semiq

GP3D020A065X is a 650V, 20A, 2.39 x 2.39mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D020A120X
Mfr: semiq

GP3D020A120X is a 1200V, 20A, 3.25 x 3.25mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D020A170X
Mfr: semiq

GP3D020A170X is a 1700V, 20A, 3.95 x 3.95xmm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D030A065X
Mfr: semiq

GP3D030A065X is a 650V, 30A, 2.86 x 2.86mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D030A120X
Mfr: semiq

GP3D030A120X is a 1200V, 30A, 3.9 x 3.9mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D050A065X
Mfr: semiq

GP3D050A065X is a 650V, 50A, 3.50 x 3.50mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D050A120X
Mfr: semiq

GP3D050A120X is a 1200V, 50A, 4.93 x 4.93mm bare-die SiC Schottky diode from SemiQ. Fabricated on 150mm wafers with robust characteristics including Improved moisture resistance, > 20 million hours (HTRB & H3TRB), Improved surge currents and low defect density. The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3D050B170X
Mfr: semiq

GP3D050B170X is a 1700V, 50A, Bare die bare-die SiC Schottky diode from SemiQ. Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • All parts tested to greater than 1870V… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3T014A120X
Mfr: semiq

GP3T014A120X is a 1200V, 14mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • Lower capacitance • Higher system efficiency • Easy to parallel Applications • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3T016A120X
Mfr: semiq

GP3T016A120X is a 1200V, 16mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3T017A120X
Mfr: semiq

GP3T017A120X is a 1200V, 15mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • Lower capacitance • Higher system efficiency • Easy to parallel Applications • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3T020A120X
Mfr: semiq

GP3T020A120X is a 1200V, 18mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features: • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits… The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3T034A120X
Mfr: semiq

GP3T034A120X is a 1200V, 32mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • Lower capacitance • Higher system efficiency • Easy to parallel Applications • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3T040A120X
Mfr: semiq

GP3T040A120X is a 1200V, 38mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3T072A120X
Mfr: semiq

GP3T072A120X is a 1200V, 71mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • Lower capacitance • Higher system efficiency • Easy to parallel Applications • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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GP3T080A120X
Mfr: semiq

GP3T080A120X is a 1200V, 80mOHM RDS(on) bare-die SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V Benefits • The bare-die format supports compact, high-performance power-module and custom semiconductor designs.

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AS3T016A120H
Mfr: semiq

AS3T016A120H is a Gen 3, 1200 V, 132 A, 16 mOHM, TO-247-4L SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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AS3T040A120H
Mfr: semiq

AS3T040A120H is a Gen 3, 1200 V, 62 A, 38 mOHM, TO-247-4L SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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AS3T040A120T
Mfr: semiq

AS3T040A120T is a Gen 3, 1200V, 65A, 38mOHM RDS(on), TCPAK SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving • Qualified for Automotive Applications… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS007C120S1-E1
Mfr: semiq

GCMS007C120S1-E1 is a Gen 3, 1200V, 189A, 7.3mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS008C120S1-E1
Mfr: semiq

GCMS008C120S1-E1 is a Gen 3, 1200V, 189A, 8.4mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS010B120S1-E1
Mfr: semiq

GCMS010B120S1-E1 is a Gen 2, 1200V, 204A, 9mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS014C120S1-E1
Mfr: semiq

GCMS014C120S1-E1 is a Gen 3, 1200V, 103A, 15.0mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS016C120S1-E1
Mfr: semiq

GCMS016C120S1-E1 is a Gen 3, 1200V, 103A, 16.5mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS020B120S1-E1
Mfr: semiq

GCMS020B120S1-E1 is a Gen 2, 1200V, 105A, 20mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS034C120S1-E1
Mfr: semiq

GCMS034C120S1-E1 is a Gen 3, 1200V, 53A, 34mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS040B120S1-E1
Mfr: semiq

GCMS040B120S1-E1 is a Gen 2, 1200V, 57A, 37mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including PFC Boost Converter, DC-DC Converter Primary Switching and Synchronous rectification. Combined with paralleled Silicon Carbide Schottky… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS040C120S1-E1
Mfr: semiq

GCMS040C120S1-E1 is a Gen 3, 1200V, 53A, 39mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS080B120S1-E1
Mfr: semiq

GCMS080B120S1-E1 is a Gen 2, 1200V, 30A, 77mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including PFC Boost Converter, DC-DC Converter Primary Switching and Synchronous rectification. Combined with paralleled Silicon Carbide Schottky… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS080C120S1-E1
Mfr: semiq

GCMS080C120S1-E1 is a Gen 3, 1200V, 28A, 84mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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GCMS1P0B120S4B1
Mfr: semiq

GCMS1P0B120S4B1 is a Gen 3, 1200V, 1146A, 1.0mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems.

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