Memory > Memory ICs

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Manufacturer AMIC ETRON INFINEON MICRON MISC MITSUBISHI NANYA SAMSUNG TEXAS INSTRUMENTS

Access Mode DUAL BANK PAGE BURST FAST PAGE FAST PAGE WITH EDO FOUR BANK PAGE BURST MULTI BANK PAGE BURST PAGE SINGLE BANK PAGE BURST

Additional Feature AUTO REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH; SEATED HT-CALCULATED RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

Alternate Memory Width 16

I/O Type COMMON SEPARATE

Interleaved Burst Length 1,2,4,8 2,4,8 2,4,8,16 4,8 8

JESD-609 Code e0 e1 e3 e4

Memory Width 1 16 18 32 36 4 64 72 8

Moisture Sensitivity Level 1 3

Number of Functions 1

Number of Ports 1 2

Operating Mode ASYNCHRONOUS SYNCHRONOUS

Operating Temperature-Max 105 70 85 95

Operating Temperature-Min 0 -25 -40

Output Characteristics 3-STATE

Package Body Material PLASTIC/EPOXY UNSPECIFIED

Package Shape RECTANGULAR SQUARE

Peak Reflow Temperature (Cel) 235 245 260 NOT SPECIFIED

Qualification Status Not Qualified

Refresh Cycles 1024 2048 256 4096 512 8192

Self Refresh NO YES

Sequential Burst Length 1,2,4,8,FP 2,4 2,4,8 2,4,8,16 4,8 8

Sub Category DRAMs Other Memory ICs

Supply Voltage-Nom (Vsup) 1.35 1.5 1.8 2.5 2.6 3 3.3 5

Surface Mount NO YES

Technology CMOS MOS NMOS

Temperature Grade COMMERCIAL INDUSTRIAL OTHER

Terminal Form BALL GULL WING J BEND NO LEAD THROUGH-HOLE

Terminal Position BOTTOM DUAL QUAD SINGLE

Time@Peak Reflow Temperature-Max (s) 15 20 30 NOT SPECIFIED

Part Number	Description	In Stock
MT46H32M32LFCM-6IT:A Mfr: micron	DDR DRAM, 32MX32, 5.5ns, CMOS, PBGA90	0
MT46H32M32LFCM-75IT Mfr: micron	DDR DRAM, 32MX32, 6ns, CMOS, PBGA90	0
MT46V128M4P-6T:F Mfr: micron	DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66	0
MT46V16M16P-5B Mfr: micron	DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66	0
MT46V16M16P-5B:M Mfr: micron	DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66	0
MT46V16M16TG-6T:F Mfr: micron	DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66	0
MT46V32M8TG-5B:G Mfr: micron	DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66	0
MT47H128M8CF-3:H Mfr: micron	DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60	0
MT47H128M8CF-3IT:H Mfr: micron	DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60	0
MT47H16M16FG-37E:B Mfr: micron	DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84	0
MT47H32M16HR-25E:G Mfr: micron	DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84	0
MT47H32M16NF-25E:H Mfr: micron	DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84	0
MT47H64M16HR-3:H Mfr: micron	DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84	0
MT48LC16M16A2P-6A Mfr: micron	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54	0
MT48LC4M16A2P-7E Mfr: micron	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54	0
MT48LC8M16A2P-6A Mfr: micron	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54	0
MT48V4M32LFF5-8IT:G Mfr: micron	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90	0
MT49H16M36FM-25E:B Mfr: micron	DDR DRAM, 16MX36, 15ns, CMOS, PBGA144	0
MT49H32M18FM-25:A Mfr: micron	DDR DRAM, 32MX18, 20ns, CMOS, PBGA144	0
MT8JTF12864AZ-1G4F1 Mfr: micron	DDR DRAM Module, 128MX64, CMOS, PDMA240	0
NT5TU32M16DG-BD Mfr: nanya	DDR DRAM, 32MX16, 0.35ns, CMOS, PBGA84	0

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