51 Products
Showing results 1 - 51
Manufacturer
Additional Feature
Breakdown Voltage-Min
Configuration
Diode Capacitance-Max
Diode Capacitance-Nom
Diode Element Material
Diode Type
Forward Voltage-Max (VF)
Frequency Band
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
Moisture Sensitivity Level
Noise Figure-Max
Non-rep Pk Forward Current-Max
Number of Elements
Number of Terminals
Operating Temperature-Max
Operating Temperature-Min
Output Current-Max
Package Body Material
Package Shape
Package Style
Peak Reflow Temperature (Cel)
Power Dissipation-Max
Qualification Status
Reference Standard
Rep Pk Reverse Voltage-Max
Reverse Current-Max
Sub Category
Surface Mount
Technology
Terminal Finish
Terminal Form
Terminal Position
Time@Peak Reflow Temperature-Max (s)
Items per page:
| Part Number | Part Description | In Stock | On Order | Lead Time (weeks) | Price |
|---|---|---|---|---|---|
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BAS70-04,215 Mfr: nexperia |
Rectifier Diode, Schottky, 1 Element, 0.12A,40VV(RRM), Silicon | 9132000 | 0 |
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MMSD301T1G Mfr: on semiconductor |
Narrow Band High Power Amplifier | 1509000 | 0 |
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BAS70-05,215 Mfr: nexperia |
Rectifier Diode, Schottky, 1Element,0.12A,40VV(RRM), Silicon | 1275000 | 0 |
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DB2J20900L Mfr: panasonic industrial devices |
210000 | 0 |
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MMBD301LT1G Mfr: on semiconductor |
192000 | 0 |
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MMDL770T1G Mfr: on semiconductor |
72000 | 0 |
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BAT17,215 Mfr: nexperia |
Rectifier Diode, 3 Element, 0.2A,250VV(RRM),Silicon | 63000 | 0 |
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MMDL301T1G Mfr: on semiconductor |
ZenerDiode,9.1VV(Z),5.05%,0.225W,Silicon,Unidirectional,TO-236AB | 39000 | 0 |
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1PS79SB17,115 Mfr: nexperia |
Rectifier Diode, Schottky, 2Element,0.12A,40VV(RRM), Silicon | 36000 | 0 |
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BAS70-04FILM Mfr: st microelectronics |
36000 | 0 |
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MMSD701T1G Mfr: on semiconductor |
33000 | 0 |
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BAR18FILM Mfr: st microelectronics |
Rectifier Diode, 1Element,0.215A,50VV(RRM),Silicon, TO-236AB | 30000 | 0 |
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DA2710100L Mfr: panasonic industrial devices |
30000 | 0 |
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DB2J40700L Mfr: panasonic industrial devices |
30000 | 0 |
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BAS70-05FILM Mfr: st microelectronics |
27000 | 0 |
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MMBD101LT1G Mfr: on semiconductor |
27000 | 0 |
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MMBD701LT1G Mfr: on semiconductor |
Rectifier Diode, 2 Element, 0.3A,400VV(RRM),Silicon | 27000 | 0 |
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BA591,115 Mfr: nxp semiconductor |
12000 | 0 |
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DB2J20100L Mfr: panasonic industrial devices |
9000 | 0 |
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DB3J316N0L Mfr: panasonic industrial devices |
Mixer Diode, Very High Frequency, Silicon | 9000 | 0 |
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DB3X316J0L Mfr: panasonic industrial devices |
9000 | 0 |
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DB3X407K0L Mfr: panasonic industrial devices |
Mixer Diode, Ultra High Frequency, Silicon,TO-236AA | 9000 | 0 |
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MMBD352LT1G Mfr: on semiconductor |
9000 | 0 |
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MMBD352LT1 Mfr: on semi |
SILICON UHF BAND MIXER DIODE | 450 | 0 |
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1PS70SB84,115 Mfr: nexperia |
0 | 0 |
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1PS70SB85,115 Mfr: nexperia |
Mixer Diode, Ultra High Frequency, Silicon | 0 | 0 |
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BA592E6327HTSA1 Mfr: infineon |
Mixer Diode, Very High Frequency, Silicon | 0 | 0 |
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BA592E6327HTSA1 Mfr: infineon |
Mixer Diode, Very High Frequency, Silicon | 0 | 0 |
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BAS70-04,215 Mfr: np2 |
Mixer Diode, Silicon, TO-236AB | 0 | 0 |
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BAS70-05,215 Mfr: nexperia |
Mixer Diode, Silicon | 0 | 0 |
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BAS70-06FILM Mfr: st microelectronics |
Mixer Diode, Ultra High Frequency, Silicon | 0 | 0 |
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BAS70E6327HTSA1 Mfr: infineon |
Mixer Diode, Silicon | 0 | 0 |
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BAS70E6327HTSA1 Mfr: infineon |
Mixer Diode, Silicon | 0 | 0 |
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BAT17,235 Mfr: nexperia |
Mixer Diode, Ultra High Frequency, 8dB NoiseFigure, Silicon | 0 | 0 |
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DA2J10400L Mfr: panasonic industrial devices |
Mixer Diode, Very High Frequency, Silicon | 0 | 0 |
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DA4X101K0R Mfr: panasonic industrial devices |
Dual, Switching, VR:80V, IF:10 | 0 | 0 |
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DB2J20800L Mfr: panasonic industrial devices |
Mixer Diode, Very High Frequency, Silicon | 0 | 0 |
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DB2J31000L Mfr: panasonic industrial devices |
0 | 0 |
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DB2J31300L Mfr: panasonic industrial devices |
0 | 0 |
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DB2J31400L Mfr: panasonic industrial devices |
Mixer Diode, L Band, Silicon | 0 | 0 |
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DB3J316F0L Mfr: panasonic industrial devices |
Mixer Diode, Very High Frequency, Silicon | 0 | 0 |
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DB3X313F0L Mfr: panasonic industrial devices |
Mixer Diode, Ultra High Frequency, Silicon,TO-236AA | 0 | 0 |
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DB3X316K0L Mfr: panasonic industrial devices |
Mixer Diode, Very High Frequency, Silicon, TO-236AA | 0 | 0 |
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DB3X501K0L Mfr: panasonic industrial devices |
Mixer Diode, Ultra High Frequency, Silicon,TO-236AA | 0 | 0 |
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HSMS-282C-TR1G Mfr: avago technologies |
Mixer Diode, C Band, Silicon | 0 | 0 |
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MA3X704A Mfr: panasonic |
Mixer Diode, L Band, Silicon, TO-236 | 0 | 0 |
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MMBD301LT1G Mfr: on semiconductor |
Mixer Diode, Ultra High Frequency, Silicon, TO-236 | 0 | 0 |
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MMBD330T1G Mfr: on semi |
Mixer Diode, Very High Frequency toUltraHighFrequency, Silicon | 0 | 0 |
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MMBD770T1G Mfr: on semiconductor |
MMBD770T1 Series 70 V 200 nA S | 0 | 0 |
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SMMSD301T1G Mfr: on semiconductor |
Mixer Diode | 0 | 0 |
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SMMSD301T1G Mfr: on semiconductor |
Mixer Diode | 0 | 0 |
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