Semiconductors > Transistors > Small Signal Field-Effect Tran

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Case Connection DRAIN

Collector Current-Max (IC) 0.1

Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE AND RESISTOR

DC Current Gain-Min (hFE) 200

FET Technology JUNCTION METAL-OXIDE SEMICONDUCTOR

JESD-609 Code e0 e1 e3 e4

Moisture Sensitivity Level 1 NOT APPLICABLE

Number of Elements 1 2

Number of Terminals 3 4 5 6 8

Operating Mode DEPLETION MODE ENHANCEMENT MODE

Operating Temperature-Max 135 150 175 200

Package Body Material METAL PLASTIC/EPOXY UNSPECIFIED

Package Shape RECTANGULAR ROUND SQUARE

Package Style CHIP CARRIER CYLINDRICAL IN-LINE SMALL OUTLINE

Peak Reflow Temperature (Cel) 240 260 NOT APPLICABLE NOT SPECIFIED

Polarity/Channel Type N-CHANNEL N-CHANNEL AND P-CHANNEL P-CHANNEL

Power Dissipation Ambient-Max 1.8 2 2.5 6.25

Qualification Status Not Qualified Qualified

Reference Standard AEC-Q101 AEC-Q101; IEC-60134 MIL

Sub Category FET General Purpose Power FET General Purpose Powers FET General Purpose Small Signal Other Transistors

Surface Mount NO YES

Terminal Finish MATTE TIN Matte Tin (Sn) Nickel/Palladium/Gold (Ni/Pd/Au) Tin (Sn) TIN LEAD TIN SILVER COPPER Tin/Lead (Sn/Pb)

Terminal Form C BEND FLAT GULL WING NO LEAD THROUGH-HOLE WIRE

Terminal Position BOTTOM DUAL SINGLE

Time@Peak Reflow Temperature-Max (s) 30 40 NOT APPLICABLE NOT SPECIFIED

Transistor Application AMPLIFIER SWITCHING

Transistor Element Material SILICON

VCEsat-Max 0.3

Part Number	Description	In Stock
VN2222LL Mfr: vishay/siliconix	Small Signal Field-Effect Transistor,0.23AI(D),60V, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-226AA	1600