Semiconductors > Transistors > RF Small Signal Field-Effect Transistors

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Manufacturer CALOGIC NXP ON SEMICONDUCTOR ON SEMICONDUCTOR/FAIRCHILD ST MICROELECTRONICS

Additional Feature HIGH RELIABILITY, LOW NOISE LOW NOISE

Case Connection GATE SOURCE

Configuration SEPARATE, 2 ELEMENTS SINGLE SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) 0.01 0.03 0.04 1.5

Drain Current-Max (ID) 0.01 0.03 0.04 1.5

DS Breakdown Voltage-Min 18 20 25 3 30 7

Feedback Cap-Max (Crss) 0.04 0.4 0.9 1.2 2.5

FET Technology JUNCTION METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band ULTRA HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND

JEDEC-95 Code TO-18 TO-236 TO-236AB

JESD-30 Code O-MBCY-W3 R-PDSO-F4 R-PDSO-G3 R-PDSO-G4 R-PDSO-G8

JESD-609 Code e0 e3

Moisture Sensitivity Level 1 3

Number of Elements 1 2

Number of Terminals 3 4 8

Operating Mode DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, ENHANCEMENT MODE ENHANCEMENT MODE

Operating Temperature-Max 135 150

Package Body Material METAL PLASTIC/EPOXY

Package Shape RECTANGULAR ROUND

Package Style CYLINDRICAL SMALL OUTLINE

Peak Reflow Temperature (Cel) 260 NOT SPECIFIED

Polarity/Channel Type N-CHANNEL

Power Dissipation-Max (Abs) .36 .5 0.2 0.225 0.25 0.5 6

Power Gain-Min (Gp) 13 18

Qualification Status Not Qualified

Sub Category FET General Purpose Power FET General Purpose Powers FET General Purpose Small Signal Other Transistors

Surface Mount NO YES

Terminal Finish MATTE TIN Matte Tin (Sn) TIN Tin (Sn) Tin/Lead (Sn/Pb)

Terminal Form FLAT GULL WING WIRE

Terminal Position BOTTOM DUAL

Time@Peak Reflow Temperature-Max (s) 30 40 NOT SPECIFIED

Transistor Application AMPLIFIER SWITCHING

Transistor Element Material SILICON

Part Number	Description	In Stock
MMBFJ309LT1G Mfr: on semiconductor	N-Channel 25 V 10 mA Surface Mount VHF/UHF Amplifier Transistor JFET - SOT-23	21000
BF1108R,215 Mfr: nxp	RF Small Signal Field-EffectTransistor,1-Element,Ultra High Frequency Band,Silicon,N-Channel,Metal-oxide Semiconductor FET	0
BF511,215 Mfr: nxp		0
BF513,215 Mfr: nxp	SOT23/JFET N-CHANNEL	0
BF513,215 Mfr: nxp	RF Small Signal Field-EffectTransistor,1-Element,Very High Frequency Band,Silicon,N-Channel,Junction FET	0
BF545A,215 Mfr: nxp		0
BF992,215 Mfr: nxp	Power Bipolar Transistor, 3A I(C), 80VV(BR)CEO,1-Element, NPN, Silicon, TO-225AA,Plastic/Epoxy, 3Pin	0
BF992,215 Mfr: nxp	BF992 SERIES 20 V 40 MA SILICON N-CHANNEL DUAL GATEMOSFET - SOT143B	0
MMBFJ309LT1G Mfr: on semiconductor	N-Channel 25 V 10 mA Surface Mount VHF/UHF Amplifier Transistor JFET - SOT-23	0
MRFE6VP6600NR3 Mfr: nxp	MRFE6VP6600N Series 133 V 230 MHz RF Power LDMOS Transistor - OM780-4	0
PD84001 Mfr: st microelectronics	PD84001 Series 870 MHz 6 W 18 V N-Channel RF Power Transistor - SOT-89	0
SST309 Mfr: calogic	RF Small Signal Field-EffectTransistor,1-Element,Ultra High Frequency Band,Silicon,N-Channel,Junction FET	0
SST310 Mfr: calogic	RF Small Signal Field-EffectTransistor,1-Element,Ultra High Frequency Band,Silicon,N-Channel,Junction FET	0
SST440 Mfr: calogic	RF Small SignalField-EffectTransistor,2-Element,Ultra HighFrequency Band,Silicon,N-Channel,Junction FET	0
SST441-LF Mfr: calogic	Trans JFET N-CH 8-Pin SO	0
SST5912 Mfr: calogic	2 CHANNEL, UHF BAND, Si, N-CHANNEL,RFSMALLSIGNAL,JFET	0
SSTJ212 Mfr: calogic	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET	0