Manufacturer
Additional Feature
Case Connection
Collector Current-Max (IC)
Collector-base Capacitance-Max
Collector-emitter Voltage-Max
Configuration
DC Current Gain-Min (hFE)
Fall Time-Max (tf)
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
Moisture Sensitivity Level
Number of Elements
Number of Terminals
Operating Temperature-Max
Package Body Material
Package Shape
Package Style
Peak Reflow Temperature (Cel)
Polarity/Channel Type
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Qualification Status
Reference Standard
Rise Time-Max (tr)
Sub Category
Surface Mount
Terminal Finish
Terminal Form
Terminal Position
Time@Peak Reflow Temperature-Max (s)
Transistor Application
Transistor Element Material
Transition Frequency-Nom (fT)
Turn-off Time-Max (toff)
Turn-on Time-Max (ton)
VCEsat-Max
Items per page:
| Part Number | Part Description | In Stock | On Order | Lead Time (weeks) | Price |
|---|---|---|---|---|---|
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SBCP56-16T1G Mfr: on semiconductor |
3396000 | 0 |
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BCP56-16T1G Mfr: on semiconductor |
441000 | 0 |
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BCP68,115 Mfr: nexperia |
378000 | 0 |
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ZDT6790TA Mfr: diodes inc. |
356000 | 0 |
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MJD45H11T4G Mfr: on semiconductor |
355000 | 0 |
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BCP56T1G Mfr: on semiconductor |
BCP Series NPN 1.5 W 80 V 1 A | 164000 | 0 |
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MJD127T4 Mfr: st microelectronics |
PowerBipolarTransistor,2AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy, 2Pin | 135000 | 0 |
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NCV1413BDR2G Mfr: on semiconductor |
DigitalSignalProcessor,16-BitSize,16-ExtBit,120MHz,CMOS,PQFP160 | 132500 | 0 |
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MJD32CT4G Mfr: on semiconductor |
PowerBipolarTransistor,3AI(C),40VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy,2Pin | 127500 | 0 |
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BCP53,115 Mfr: nexperia |
126000 | 0 |
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FZT751TA Mfr: diodes inc. |
114000 | 0 |
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NJVMJD32CT4G-VF01 Mfr: on semiconductor |
Interface Circuit, PDSO14 | 100000 | 0 |
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BUL138 Mfr: st microelectronics |
PowerField-EffectTransistor,20AI(D),100V,0.05ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET | 96000 | 0 |
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NJVMJD31CT4G-VF01 Mfr: on semiconductor |
95000 | 0 |
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PBSS4540Z,115 Mfr: nexperia |
RectifierDiode,Schottky,1Element,0.5A,40VV(RRM),Silicon | 88000 | 0 |
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MJD50T4G Mfr: on semiconductor |
85000 | 0 |
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NSV40301MZ4T1G Mfr: on semiconductor |
Small Signal Bipolar Transistor,0.1AI(C),45VV(BR)CEO, 2-Element, PNP, Silicon | 84000 | 0 |
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SBCP53-10T1G Mfr: on semiconductor |
72000 | 0 |
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BCP68-25,115 Mfr: nexperia |
Small Signal Bipolar Transistor, 1A I(C),80VV(BR)CEO, 1-Element, NPN, Silicon | 70000 | 0 |
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MC1413DR2G Mfr: on semiconductor |
Fixed Positive Standard Regulator,15VBIPolar,PSSO2 | 67500 | 0 |
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NJVNJD2873T4G Mfr: on semiconductor |
67500 | 0 |
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FZT658TA Mfr: diodes inc. |
60000 | 0 |
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MJD127T4G Mfr: on semiconductor |
PowerBipolarTransistor,2AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy, 2Pin | 60000 | 0 |
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BCP69T1G Mfr: on semiconductor |
BUK9Y19 Series 100 V 19 mOhmSMTN-ChannelLogicLevelMOSFET - LFPAK-56 | 56000 | 0 |
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FZT651TA Mfr: diodes inc. |
53000 | 0 |
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FZT792ATA Mfr: diodes inc. |
53000 | 0 |
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BCX51-16,115 Mfr: nexperia |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO,1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3Pin | 51000 | 0 |
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FZT851TA Mfr: diodes inc. |
50000 | 0 |
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MJD44H11T4G Mfr: on semiconductor |
PowerBipolarTransistor,0.5AI(C),300VV(BR)CEO,1-Element,PNP,Silicon,TO-252,Plastic/Epoxy, 2Pin | 50000 | 0 |
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MJD112T4G Mfr: on semiconductor |
45000 | 0 |
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MJD122T4G Mfr: on semiconductor |
MJD Series 100 V 8 A NPN Compl | 42500 | 0 |
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NJVMJD122T4G-VF01 Mfr: on semiconductor |
PowerBipolarTransistor,15AI(C),250VV(BR)CEO,1-Element,PNP,Silicon,Plastic/Epoxy, 3Pin | 40000 | 0 |
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MJD350T4 Mfr: st microelectronics |
35000 | 0 |
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MJD44H11G Mfr: on semiconductor |
33975 | 0 |
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FZT953TA Mfr: diodes inc. |
28000 | 0 |
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ZXTP2013GTA Mfr: diodes inc. |
28000 | 0 |
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MJD32CT4 Mfr: st microelectronics |
MJD32C Series PNP 100 V 3A Sur | 27500 | 0 |
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BCP68T1G Mfr: on semiconductor |
Zener Diode, 9.1V V(Z),5%,5W,Silicon,Unidirectional | 27000 | 0 |
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FZT603TA Mfr: diodes inc. |
27000 | 0 |
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FZT1047ATA Mfr: diodes inc. |
FZT1047A Series NPN 5 A 10 V S | 26000 | 0 |
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TIP32CG Mfr: on semiconductor |
25600 | 0 |
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FZT1053ATA Mfr: diodes inc. |
25000 | 0 |
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FZT694BTA Mfr: diodes inc. |
Comparator,1Func,9000uVOffset-Max,600nsResponseTime,BIPolar,PDSO5 | 25000 | 0 |
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MJD350T4G Mfr: on semiconductor |
PowerBipolarTransistor,0.5AI(C),300VV(BR)CEO,1-Element,PNP,Silicon,TO-252,Plastic/Epoxy, 2Pin | 25000 | 0 |
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ZXT10P12DE6TA Mfr: diodes |
Power Bipolar Transistor, 3A I(C),12VV(BR)CEO,1-Element, PNP, Silicon, Plastic/Epoxy,6Pin | 24977 | 0 |
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MC1413DG Mfr: on semiconductor |
Prescaler, 100E Series, 1-Func, ECL, PDSO8 | 23232 | 0 |
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MJD41CT4G Mfr: on semiconductor |
Operational Amplifier, 4Func,2000uVOffset-Max,CMOS, PDSO14 | 22500 | 0 |
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FZT600TA Mfr: diodes inc. |
CeramicCapacitor,Multilayer,Ceramic,25V,10%+Tol,10%-Tol,X7R,15%TC,0.0033uF,SurfaceMount, 0603 | 22000 | 0 |
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BD139-16 Mfr: st microelectronics |
21250 | 0 |
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TIP121 Mfr: st microelectronics |
TIP121 Series 80 V 5 A NPN Com | 19700 | 0 |
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BD438 Mfr: st microelectronics |
19450 | 0 |
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BSP41,115 Mfr: nexperia |
19000 | 0 |
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ULN2803A Mfr: st microelectronics |
18040 | 0 |
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FZT560TA Mfr: diodes inc. |
Power BipolarTransistor,0.15AI(C),500VV(BR)CEO,1-Element,PNP,Silicon,Plastic/Epoxy, 4Pin | 18000 | 0 |
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NJVMJD31CT4G Mfr: on semiconductor |
PowerBipolarTransistor,8AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy, 2Pin | 17500 | 0 |
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BSR43,115 Mfr: nexperia |
17000 | 0 |
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BD135 Mfr: st microelectronics |
SmallSignalBipolarTransistor,0.1AI(C),45VV(BR)CEO,1-Element,NPN,Silicon,TO-236AB | 16900 | 0 |
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TIP41CG Mfr: on semiconductor |
16900 | 0 |
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D44H11G Mfr: on semiconductor |
16750 | 0 |
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MJD122G Mfr: on semiconductor |
PowerBipolarTransistor,2AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy, 2Pin | 16650 | 0 |
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MJE15031G Mfr: on semiconductor |
PowerBipolarTransistor,6AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy, 2Pin | 16350 | 0 |
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D45VH10G Mfr: on semiconductor |
15250 | 0 |
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FZT1049ATA Mfr: diodes inc. |
15000 | 0 |
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FZT458TA Mfr: diodes inc. |
15000 | 0 |
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MJD243T4G Mfr: on semiconductor |
PowerBipolarTransistor,10AI(C),60VV(BR)CEO,1-Element,PNP,Silicon,Plastic/Epoxy,2Pin | 15000 | 0 |
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MJD3055T4 Mfr: st microelectronics |
15000 | 0 |
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MJD6039T4G Mfr: on semiconductor |
15000 | 0 |
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TIP50 Mfr: st microelectronics |
Interface Circuit, CMOS | 14800 | 0 |
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MJE340 Mfr: st microelectronics |
Ceramic Resonator, 5MHz Nom | 12900 | 0 |
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BD912 Mfr: st microelectronics |
PowerBipolarTransistor,4AI(C),100VV(BR)CEO,1-Element,PNP,Silicon,TO-126,Plastic/Epoxy, 3Pin | 12750 | 0 |
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TIP31CG Mfr: on semiconductor |
Interface Circuit, CMOS | 12600 | 0 |
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NJVMJD42CT4G Mfr: on semiconductor |
Operational Amplifier,2Func,5000uVOffset-Max,BIPolar, PDSO16 | 12500 | 0 |
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BCP54-10,135 Mfr: nexperia |
PowerField-EffectTransistor,17AI(D),650V,0.19ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-263AB | 12000 | 0 |
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BCP56T3G Mfr: on semiconductor |
Power Bipolar Transistor, 1AI(C),80VV(BR)CEO,1-Element, NPN,Silicon,TO-261AA,Plastic/Epoxy, 4Pin | 12000 | 0 |
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BCX51-16,135 Mfr: nexperia |
BCX51 Series 45 V 1 A PNP Medi | 12000 | 0 |
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FZT1149ATA Mfr: diodes inc. |
12000 | 0 |
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FZT605TC Mfr: diodes inc. |
12000 | 0 |
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MJE210G Mfr: on semiconductor |
PowerBipolarTransistor,8AI(C),80VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy,2Pin | 12000 | 0 |
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TIP110G Mfr: on semiconductor |
11850 | 0 |
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MJD45H11G Mfr: on semiconductor |
PowerBipolarTransistor,3AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy, 2Pin | 11700 | 0 |
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MJD47G Mfr: on semiconductor |
11250 | 0 |
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D44VH10G Mfr: on semiconductor |
10550 | 0 |
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MJE5852G Mfr: on semiconductor |
10300 | 0 |
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BD140 Mfr: st microelectronics |
RectifierDiode,Schottky,1Phase,1Element,3A,40VV(RRM),Silicon | 9750 | 0 |
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TIP30CG Mfr: on semiconductor |
9650 | 0 |
|
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MJE15032G Mfr: on semiconductor |
PowerField-EffectTransistor,2.8AI(D),20V,0.085ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-236AB | 9400 | 0 |
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FZT951TA Mfr: diodes inc. |
9000 | 0 |
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MJE13007G Mfr: on semiconductor |
PowerBipolarTransistor,6AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy, 2Pin | 8550 | 0 |
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TIP117G Mfr: on semiconductor |
8550 | 0 |
|
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BD136 Mfr: st microelectronics |
8500 | 0 |
|
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MJE350G Mfr: on semiconductor |
8500 | 0 |
|
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TIP36C Mfr: st microelectronics |
Power Bipolar Transistor,5AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,TO-220AB,Plastic/Epoxy, 3Pin | 8160 | 0 |
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2N6036G Mfr: on semiconductor |
TransVoltageSuppressorDiode,Unidirectional,1Element,Silicon,MO-178AA | 8000 | 0 |
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2STF2360 Mfr: st microelectronics |
7500 | 0 |
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MJD112T4 Mfr: st microelectronics |
7500 | 0 |
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MJD117T4 Mfr: st microelectronics |
Power Bipolar Transistor, 2A I(C), 100VV(BR)CEO,1-Element, PNP, Silicon, Plastic/Epoxy, 2Pin | 7500 | 0 |
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MJD210T4G Mfr: on semiconductor |
Power Bipolar Transistor,5AI(C),25VV(BR)CEO,1-Element, NPN,Silicon,Plastic/Epoxy,2Pin | 7500 | 0 |
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MJD253T4G Mfr: on semiconductor |
PowerBipolarTransistor,6AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy, 2Pin | 7500 | 0 |
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MJD2955T4G Mfr: on semiconductor |
Power BipolarTransistor,4AI(C),100VV(BR)CEO,1-Element,PNP,Silicon,TO-225AA,Plastic/Epoxy, 3Pin | 7500 | 0 |
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MJD340T4 Mfr: st microelectronics |
PowerBipolarTransistor,2AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy, 2Pin | 7500 | 0 |
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