Manufacturer
Additional Feature
Avalanche Energy Rating (Eas)
Case Connection
Collector Current-Max (IC)
Collector-emitter Voltage-Max
Configuration
DC Current Gain-Min (hFE)
Drain Current-Max (Abs) (ID)
Drain Current-Max (ID)
Drain-source On Resistance-Max
DS Breakdown Voltage-Min
Feedback Cap-Max (Crss)
FET Technology
Highest Frequency Band
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
Moisture Sensitivity Level
Number of Elements
Number of Terminals
Operating Mode
Operating Temperature-Max
Operating Temperature-Min
Package Body Material
Package Shape
Package Style
Peak Reflow Temperature (Cel)
Polarity/Channel Type
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Qualification Status
Reference Standard
Sub Category
Surface Mount
Terminal Finish
Terminal Form
Terminal Position
Time@Peak Reflow Temperature-Max (s)
Transistor Application
Transistor Element Material
Transition Frequency-Nom (fT)
VCEsat-Max
Items per page:
| Part Number | Part Description | In Stock | On Order | Lead Time (weeks) | Price |
|---|---|---|---|---|---|
|
2N7002LT1G Mfr: on semiconductor |
12690000 | 0 |
|
||
|
2N7002WT1G Mfr: on semiconductor |
N-Channel 60 V 1.6 Ohm 280 mW | 3726000 | 0 |
|
|
|
2N7002-7-F Mfr: diodes inc. |
2700000 | 0 |
|
||
|
FDV303N Mfr: fairchild (on semiconductor) |
2178000 | 0 |
|
||
|
BSS138LT1G Mfr: on semiconductor |
Zener Diode, 15VV(Z),6.12%,0.2W,Silicon,Unidirectional | 2058000 | 0 |
|
|
|
BSS123LT1G Mfr: on semiconductor |
Zener Diode, 11VV(Z),5.45%,0.3W,Silicon,Unidirectional | 2025000 | 0 |
|
|
|
2N7002,215 Mfr: nexperia |
1701000 | 0 |
|
||
|
DMG1012UW-7 Mfr: diodes inc. |
Rectifier Diode, 1 Element, 1A, 600V V(RRM),Silicon | 1539000 | 0 |
|
|
|
BSS84LT1G Mfr: on semiconductor |
Ceramic Capacitor, Multilayer, Ceramic,16V,80%+Tol,20% -Tol, Y5V, -82/+22% TC,0.047uF,SurfaceMount,0402 | 1356000 | 0 |
|
|
|
2N7002CK,215 Mfr: nexperia |
1287000 | 0 |
|
||
|
ZXM61N02FTA Mfr: diodes inc. |
PowerField-EffectTransistor,0.075AI(D),450V,150ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET | 1239000 | 0 |
|
|
|
2N7002ET1G Mfr: on semiconductor |
1140000 | 0 |
|
||
|
2N7002E-7-F Mfr: diodes inc. |
N-Channel 60 V 4 Ohm MosFet Su | 1101000 | 0 |
|
|
|
DMG3420U-7 Mfr: diodes inc. |
Small SignalField-EffectTransistor,0.37AI(D),60V,2-Element,N-ChannelandP-Channel,Silicon,Metal-oxideSemiconductorFET | 1074000 | 0 |
|
|
|
STN1NK60Z Mfr: st microelectronics |
RectifierDiode,1Phase,1Element,30A,400VV(RRM),Silicon,TO-220AC | 1068000 | 0 |
|
|
|
2N7002P,215 Mfr: nexperia |
1062000 | 0 |
|
||
|
BSS138W-7-F Mfr: diodes inc. |
1041000 | 0 |
|
||
|
PMV40UN2R Mfr: nexperia |
Small SignalBipolarTransistor,0.5AI(C),80VV(BR)CEO, 1-Element,PNP,Silicon | 1029000 | 0 |
|
|
|
ZXM61P02FTA Mfr: diodes inc. |
PowerField-EffectTransistor,0.075AI(D),450V,150ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET | 951000 | 0 |
|
|
|
ZXM61P03FTA Mfr: diodes inc. |
PowerField-EffectTransistor,0.075AI(D),450V,150ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET | 882000 | 0 |
|
|
|
NX7002AK,215 Mfr: nexperia |
828000 | 0 |
|
||
|
PMV45EN2R Mfr: nexperia |
Power Field-Effect Transistor, 9AI(D),20V,0.014ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 819000 | 0 |
|
|
|
SQ2361ES-T1_GE3 Mfr: siliconix (vishay) |
804000 | 0 |
|
||
|
NTR4502PT1G Mfr: on semiconductor |
SmallSignalField-EffectTransistor,1.3AI(D),20V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET,TO-236 | 795000 | 0 |
|
|
|
BSS123-7-F Mfr: diodes inc. |
Zener Diode, 13VV(Z),6.42%,0.2W,Silicon,Unidirectional | 786000 | 0 |
|
|
|
DMN26D0UT-7 Mfr: diodes inc. |
Small Signal Field-EffectTransistor,1.33AI(D),20V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 783000 | 0 |
|
|
|
ZXMN6A07FTA Mfr: diodes inc. |
759000 | 0 |
|
||
|
2N7002W-7-F Mfr: diodes inc. |
Rectifier Diode, 1 Element,0.125A,80VV(RRM),Silicon | 705000 | 0 |
|
|
|
SI9945BDY-T1-GE3 Mfr: siliconix (vishay) |
Aluminum Electrolytic Capacitor,Polarized,Aluminum(wet), 16V, 20% +Tol, 20% -Tol,47uF,Through HoleMount | 680000 | 0 |
|
|
|
2N7002KT1G Mfr: on semiconductor |
660000 | 0 |
|
||
|
PMV65XP,215 Mfr: nexperia |
Small Signal BipolarTransistor,0.6AI(C),30VV(BR)CEO, 1-Element, NPN,Silicon | 648000 | 0 |
|
|
|
BSN20-7 Mfr: diodes inc. |
564000 | 0 |
|
||
|
STR1P2UH7 Mfr: st microelectronics |
Power Field-EffectTransistor,P-Channel,Metal-oxideSemiconductor FET | 552000 | 0 |
|
|
|
2N7002K-7 Mfr: diodes inc. |
Small Signal Field-Effect Transistor,0.3AI(D),60V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-236AB | 534000 | 0 |
|
|
|
BSS138BK,215 Mfr: nexperia |
531000 | 0 |
|
||
|
NTR4003NT1G Mfr: on semiconductor |
Single N-Channel 30 V 2 Ohm 1. | 519000 | 0 |
|
|
|
MMBF170-7-F Mfr: diodes inc. |
Bridge Rectifier Diode, 1Phase,1.5A,200VV(RRM),Silicon | 513000 | 0 |
|
|
|
BSS138LT3G Mfr: on semiconductor |
N-Channel 50 V 3.5 Ohm 225 mW | 510000 | 0 |
|
|
|
2N7002VC-7 Mfr: diodes inc. |
471000 | 0 |
|
||
|
ZXMN3A01FTA Mfr: diodes inc. |
SmallSignalField-EffectTransistor,5.4AI(D),30V,2-Element,N-ChannelandP-Channel,Silicon,Metal-oxideSemiconductorFET,MS-012AA | 462000 | 0 |
|
|
|
DMG1013UW-7 Mfr: diodes inc. |
Rectifier Diode, 1 Element, 1A, 600V V(RRM),Silicon | 443999 | 0 |
|
|
|
NTJD4401NT1G Mfr: on semiconductor |
Small SignalField-EffectTransistor,0.915AI(D),20V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 405000 | 0 |
|
|
|
ZXM61N03FTA Mfr: diodes inc. |
Ceramic Capacitor, Ceramic, 20% +Tol,20%-Tol,Y5U,-56/+22% TC, 0.005uF, Through HoleMount,4718 | 396000 | 0 |
|
|
|
DMP2035U-7 Mfr: diodes inc. |
Small Signal Field-EffectTransistor,0.22AI(D),30V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 369000 | 0 |
|
|
|
DMG1016V-7 Mfr: diodes inc. |
Rectifier Diode, 1 Element, 1A, 600V V(RRM),Silicon | 339000 | 0 |
|
|
|
DMN2065UW-7 Mfr: diodes inc. |
Small SignalField-EffectTransistor,0.5AI(D),60V,2-Element,N-ChannelandP-Channel,Silicon,Metal-oxideSemiconductorFET | 324000 | 0 |
|
|
|
MMBF170LT1G Mfr: on semiconductor |
309000 | 0 |
|
||
|
2N7002LT3G Mfr: on semiconductor |
Small Signal Field-EffectTransistor,0.115AI(D),60V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 300000 | 0 |
|
|
|
NTS4101PT1G Mfr: on semiconductor |
Board Stacking Connector,100Contact(s),2Row(s),Male, Straight, SurfaceMountTerminal | 291000 | 0 |
|
|
|
BSS84W-7-F Mfr: diodes inc. |
279000 | 0 |
|
||
|
STN3NF06 Mfr: st microelectronics |
N-Channel 60 V 0.1 Ohm STripFE | 276000 | 0 |
|
|
|
NTJD4105CT1G Mfr: on semiconductor |
IC DVR LO SIDE 42V 2.0A SOT223-4 | 273000 | 0 |
|
|
|
DMC2400UV-7 Mfr: diodes inc. |
267000 | 0 |
|
||
|
DMN6140L-7 Mfr: diodes inc. |
SmallSignalField-EffectTransistor,1AI(D),30V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 264000 | 0 |
|
|
|
DMN63D8LDW-7 Mfr: diodes inc. |
Small Signal Field-EffectTransistor,0.22AI(D),30V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 255000 | 0 |
|
|
|
DMG2302U-7 Mfr: diodes inc. |
Flash, 512MX8, 25ns, PDSO48 | 246000 | 0 |
|
|
|
ZXMP3A13FTA Mfr: diodes inc. |
SmallSignalField-EffectTransistor,2.1AI(D),20V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 246000 | 0 |
|
|
|
DMP2215L-7 Mfr: diodes inc. |
SmallSignalField-EffectTransistor,1.5AI(D),20V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET | 240000 | 0 |
|
|
|
BSS84AK,215 Mfr: nexperia |
222000 | 0 |
|
||
|
BST82,215 Mfr: nexperia |
213000 | 0 |
|
||
|
DMP2004K-7 Mfr: diodes inc. |
SmallSignalField-EffectTransistor,0.22AI(D),30V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 204000 | 0 |
|
|
|
DMN2400UFB4-7B Mfr: diodes inc. |
200000 | 0 |
|
||
|
NTS2101PT1G Mfr: on semiconductor |
186000 | 0 |
|
||
|
BSS84AKV,115 Mfr: nexperia |
SmallSignalField-EffectTransistor,0.01AI(D),40V,1-Element,N-Channel,Silicon,JunctionFET | 184000 | 0 |
|
|
|
ZXMN2A01FTA Mfr: diodes inc. |
180000 | 0 |
|
||
|
2V7002LT1G Mfr: on semiconductor |
Small Signal Bipolar Transistor,5AI(C),25VV(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 177000 | 0 |
|
|
|
NTR1P02T1G Mfr: on semiconductor |
SmallSignalField-EffectTransistor,0.4AI(D),20V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET,TO-236AB | 168000 | 0 |
|
|
|
DMP3050LVT-7 Mfr: diodes inc. |
Small SignalBipolarTransistor,2AI(C),40VV(BR)CEO,1-Element,PNP,Silicon | 162000 | 0 |
|
|
|
BSH201,215 Mfr: nexperia |
159000 | 0 |
|
||
|
BSS84,215 Mfr: nexperia |
159000 | 0 |
|
||
|
DMP3130LQ-7 Mfr: diodes inc. |
159000 | 0 |
|
||
|
BSN20BKR Mfr: nexperia |
150000 | 0 |
|
||
|
NTK3043NT1G Mfr: on semiconductor |
148000 | 0 |
|
||
|
DMN5L06VK-7 Mfr: diodes inc. |
PowerField-EffectTransistor,3.8AI(D),30V,0.054ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 144000 | 0 |
|
|
|
RK7002BMT116 Mfr: rohm semiconductor |
132000 | 0 |
|
||
|
DMG6968U-7 Mfr: diodes inc. |
Power Field-Effect Transistor | 123000 | 0 |
|
|
|
BSH111BKR Mfr: nexperia |
117000 | 0 |
|
||
|
NVTR4503NT1G Mfr: on semiconductor |
114000 | 0 |
|
||
|
NTA7002NT1G Mfr: on semiconductor |
IC DVR LO SIDE 42V 2.0A SOT223-4 | 111000 | 0 |
|
|
|
DMN65D8L-7 Mfr: diodes inc. |
108000 | 0 |
|
||
|
BSS84AKW,115 Mfr: nexperia |
105000 | 0 |
|
||
|
ZVN4106FTA Mfr: diodes inc. |
105000 | 0 |
|
||
|
SZNUD3124LT1G Mfr: on semiconductor |
Zener Diode, 5.6V V(Z), 5%, 0.5W | 102000 | 0 |
|
|
|
PMZ550UNEYL Mfr: nexperia |
Small Signal Field-Effect Transistor,2.5AI(D),20V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET,TO-236AB | 100000 | 0 |
|
|
|
NTHD4102PT1G Mfr: on semiconductor |
99000 | 0 |
|
||
|
BSS138P,215 Mfr: nexperia |
Small Signal Field-Effect Transistor, 0.36A I(D),60V, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-236AB | 96000 | 0 |
|
|
|
SI2312BDS-T1-E3 Mfr: siliconix (vishay) |
Array/Network Resistor, Isolated, ThinFilm,0.8W,15000ohm, 100V, 0.5% +/-Tol,25ppm/Cel,ThroughHole Mount, 7625 | 96000 | 0 |
|
|
|
DMG6601LVT-7 Mfr: diodes inc. |
SmallSignalField-EffectTransistor,4AI(D),20V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET | 90000 | 0 |
|
|
|
ZXMN10A07FTA Mfr: diodes inc. |
Small SignalField-EffectTransistor,60V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 90000 | 0 |
|
|
|
TP0610K-T1-E3 Mfr: siliconix (vishay) |
87000 | 0 |
|
||
|
BSH202,215 Mfr: nexperia |
84000 | 0 |
|
||
|
NX3008NBK,215 Mfr: nexperia |
Small Signal Field-EffectTransistor,0.4AI(D),30V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-236AB | 81000 | 0 |
|
|
|
DMN2100UDM-7 Mfr: diodes inc. |
78000 | 0 |
|
||
|
NTA4001NT1G Mfr: on semiconductor |
LED Driver | 78000 | 0 |
|
|
|
DMG1013T-7 Mfr: diodes inc. |
TransVoltageSuppressorDiode,230W,24VV(RWM),Bidirectional, 2Element,Silicon | 75000 | 0 |
|
|
|
PMV48XP,215 Mfr: nexperia |
Power Field-EffectTransistor,9AI(D),20V,0.014ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 75000 | 0 |
|
|
|
BSS123,215 Mfr: nexperia |
66000 | 0 |
|
||
|
MGSF1N03LT1G Mfr: on semiconductor |
Fixed Positive Standard Regulator, 5VBIPolar, PSSO2 | 66000 | 0 |
|
|
|
PMV32UP,215 Mfr: nexperia |
66000 | 0 |
|
||
|
ZVP3306FTA Mfr: diodes inc. |
PowerField-EffectTransistor,0.075AI(D),450V,150ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET | 66000 | 0 |
|