Manufacturer
Additional Feature
Avalanche Energy Rating (Eas)
Case Connection
Collector Current-Max (IC)
Collector-emitter Voltage-Max
Configuration
DC Current Gain-Min (hFE)
Drain Current-Max (Abs) (ID)
Drain Current-Max (ID)
Drain-source On Resistance-Max
DS Breakdown Voltage-Min
Feedback Cap-Max (Crss)
FET Technology
Highest Frequency Band
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
Moisture Sensitivity Level
Number of Elements
Number of Terminals
Operating Mode
Operating Temperature-Max
Operating Temperature-Min
Package Body Material
Package Shape
Package Style
Peak Reflow Temperature (Cel)
Polarity/Channel Type
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Qualification Status
Reference Standard
Sub Category
Surface Mount
Terminal Finish
Terminal Form
Terminal Position
Time@Peak Reflow Temperature-Max (s)
Transistor Application
Transistor Element Material
Transition Frequency-Nom (fT)
VCEsat-Max
Items per page:
| Part Number | Part Description | In Stock | On Order | Lead Time (weeks) | Price |
|---|---|---|---|---|---|
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BSS123-7-F Mfr: diodes inc. |
ZenerDiode,24VV(Z),5.79%,0.37W,Silicon,Unidirectional | 11496000 | 0 |
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2N7002LT1G Mfr: on semiconductor |
2N Series 80V10APlasticMedium-PowerDarlingtonTransistor-TO-220AB | 9642000 | 0 |
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2N7002,215 Mfr: nexperia |
8943000 | 0 |
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FDV303N Mfr: fairchild (on semiconductor) |
4896000 | 0 |
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2N7002BK,215 Mfr: nexperia |
PowerBipolarTransistor,7AI(C),50VV(BR)CEO,1-Element,PNP,Silicon,TO-220AB,Plastic/Epoxy, 3Pin | 3603000 | 0 |
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BSS138-7-F Mfr: diodes inc. |
OR Gate, LVC/LCX/Z Series,1-Func,2-Input,CMOS,PDSO6 | 3123000 | 0 |
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2N7002-7-F Mfr: diodes inc. |
2448000 | 0 |
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2N7002P,215 Mfr: nexperia |
2N Series 60 V 8 ANPNMedium-PowerDarlingtonSiliconTransistor -TO-220AB | 2355000 | 0 |
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2N7002K-7 Mfr: diodes inc. |
2N7002K Series 60 V 2OhmSMTN-ChannelEnhancementModeMosfet - SOT-23-3 | 2097000 | 0 |
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NTA4153NT1G Mfr: on semiconductor |
Single N-Channel 20 V 950 mOhm 1.82 nC300mWSiliconSMT Mosfet - SC-75-3 | 1761000 | 0 |
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BSS123LT1G Mfr: on semiconductor |
ZenerDiode,24VV(Z),5.79%,0.2W,Silicon,Unidirectional | 1752000 | 0 |
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ZXMN6A07FTA Mfr: diodes inc. |
1710000 | 0 |
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BSS84,215 Mfr: nexperia |
Single P-Channel 250 V 12Ohm4.3nCSIPMOSSmallSignalMosfet - SOT-223 | 1704000 | 0 |
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2V7002LT1G Mfr: on semiconductor |
N-Channel 60 V 7.5 Ohm 300 mWSurfaceMountSmallSignal Mosfet - SOT-23-3 | 1701000 | 0 |
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BSS138LT1G Mfr: on semiconductor |
BZT52C2V7 Series 500 mW 2.7 V10mASurfaceMountZenerDiode - SOD-123 | 1641000 | 0 |
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2N7002ET1G Mfr: on semiconductor |
N-Channel 60 V 2.5 ? 300 mW 0.81 nC SurfaceMountSmall Signal Mosfet - SOT-23 | 1527000 | 0 |
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BSS138BK,215 Mfr: nexperia |
N-Channel 60 V 1.6 Ohm 350 mW 0.7 nC SurfaceMountTrench MOSFET - SOT-23 | 1491000 | 0 |
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BSS138W-7-F Mfr: diodes inc. |
1410000 | 0 |
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2N7002CK,215 Mfr: nexperia |
2N7002CK Series Single N-Channel 60 V 1.6 Ohm 350mW1.3nC TrenchMOS FET - SOT-23 | 1320000 | 0 |
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NX7002AK,215 Mfr: nexperia |
Small Signal Field-EffectTransistor,1AI(D),20V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET,TO-236 | 1212000 | 0 |
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2N7002KT1G Mfr: on semiconductor |
1149000 | 0 |
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BSS84AK,215 Mfr: nexperia |
1146000 | 0 |
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PMV45EN2R Mfr: nexperia |
PMV45EN2R Series 30 V 5000 mW6.3nCSMTN-ChannelTrenchMOS FET - SOT-23 | 1008000 | 0 |
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MMBF170-7-F Mfr: diodes inc. |
GBU404 Series 4 A 400 V BridgeRectifierThroughHole-GBU-4 | 1005000 | 0 |
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DMN32D2LFB4-7 Mfr: diodes inc. |
N-Channel 30 V 1.2 Ohm Enhancement Mode Mosfet-DFN-3 | 939000 | 0 |
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ZXM61N02FTA Mfr: diodes inc. |
SmallSignalField-EffectTransistor,0.24AI(D),250V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET | 885000 | 0 |
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2N7002WT1G Mfr: on semiconductor |
P Chan, -100V, 2.5A, 3.5 OHMS, TO-243AA | 846000 | 0 |
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DMN26D0UT-7 Mfr: diodes inc. |
N-Channel 20 V 3 Ohm SMT Enhancement Mode Mosfet-SOT-523 | 777000 | 0 |
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NTR4003NT1G Mfr: on semiconductor |
Single N-Channel 30 V 2 Ohm 1.15 nC 0.69WSiliconSMT Mosfet - SOT-23 | 762000 | 0 |
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ZXM61P02FTA Mfr: diodes inc. |
ZVNL110G 100V4.5OhmN-ChannelEnhancementModeVertical DMOSFET-SOT-223 | 747000 | 0 |
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PMV40UN2R Mfr: nexperia |
Rectifier Diode, Schottky, 1 Element, 1A, Silicon | 705000 | 0 |
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PMV65XP,215 Mfr: nexperia |
PMGD780SN Series 60 V 0.92Ohm410mWDualN-ChannelTrenchMOS FET - SOT-363 | 666000 | 0 |
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ZXM61P03FTA Mfr: diodes inc. |
PowerField-EffectTransistor,0.075AI(D),450V,150ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET | 654000 | 0 |
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BSS138BKS,115 Mfr: nexperia |
Power Field-Effect Transistor, 1-Element, Silicon | 609000 | 0 |
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NTR4502PT1G Mfr: on semiconductor |
Single P-Channel 30 V 350 mOhm 10 nC1.25WSiliconSMTMosfet - SOT-23 | 591000 | 0 |
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SQ2361ES-T1_GE3 Mfr: siliconix (vishay) |
P-Channel 60 V 0.177 ? 12 nC SMT TrenchFET PowerMosfet - SOT-23 | 588000 | 0 |
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2N7002P,235 Mfr: nexperia |
2N7002P Series N-Channel 60 V 1.6 Ohm 350mW0.8nCTrenchMOS FET - SOT-23 | 530000 | 0 |
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DMG1013UW-7 Mfr: diodes inc. |
DMG1013UW Series 20 V 750 mOhm P-ChannelEnhancement Mode Mosfet - SOT-323 | 524999 | 0 |
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DMG1012UW-7 Mfr: diodes inc. |
Zener Diode,5.1VV(Z),5%,0.2W,Silicon,Unidirectional | 519000 | 0 |
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DMG3420U-7 Mfr: diodes inc. |
Rectifier Diode, 1 Element, 1A, 600V V(RRM),Silicon | 468000 | 0 |
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DMN65D8L-7 Mfr: diodes inc. |
DMN65D8L: 60 V 3 Ohm SMT N-Channel EnhancementModeMosfet - SOT-23-3 | 459000 | 0 |
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DMC2038LVT-7 Mfr: diodes inc. |
DDTD Series 50 V 500 mANPNPRE-BiasedSurfaceMountTransistor - SOT-23-3 | 450000 | 0 |
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NTJD4401NT1G Mfr: on semiconductor |
Dual N-Channel 20 V 220 mOhm 270 mW SurfaceMountSmall Signal MOSFET SOT-363 | 438000 | 0 |
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DMP3050LVT-7 Mfr: diodes inc. |
DMP3050LVT: 30 V 50 mOhm P-Channel EnhancementModeMosfet - TSOT-26 | 417000 | 0 |
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BSS84W-7-F Mfr: diodes inc. |
P-Channel 50 V 10OhmEnhancementModeTransistorSOT-323 | 396000 | 0 |
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DMC2400UV-7 Mfr: diodes inc. |
396000 | 0 |
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NTS4101PT1G Mfr: on semiconductor |
NRC Series 1206 10 Ohm 0.25 W 5 %200ppm/CSMTThickFilm Chip Resistor | 393000 | 0 |
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SI9945BDY-T1-GE3 Mfr: siliconix (vishay) |
SK Series 100 uF 25 V 20%RadialThroughHoleAluminumElectrolytic Capacitor | 392500 | 0 |
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DMP2004K-7 Mfr: diodes inc. |
N-Channel 30 V 28 mOhm SurfaceMountEnhancementModeMosfet - SOT-23-3 | 387000 | 0 |
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2N7002E-7-F Mfr: diodes inc. |
N-Channel 60 V 4 Ohm MosFet Surface Mount -SOT-23-3 | 375000 | 0 |
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IRLML2803TRPBF Mfr: infineon |
SmallSignalField-EffectTransistor,1.2AI(D),20V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-236AB | 351262 | 0 |
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BST82,215 Mfr: nexperia |
BSR14 Series 40 V CE Breakdown0.8ANPNGeneralPurposeAmplifier - SOT-23 | 342000 | 0 |
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ZXMN3A01FTA Mfr: diodes inc. |
ZVP3306F Series 60 V 14 OhmP-ChannelEnhancementModeVertical DMOS FET-SOT-23 | 342000 | 0 |
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BSS138LT3G Mfr: on semiconductor |
340000 | 0 |
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BSS84LT1G Mfr: on semiconductor |
333000 | 0 |
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DMG6968U-7 Mfr: diodes inc. |
Single N-Channel 20 V 1.3 W 8.5nCSiliconSurfaceMount Mosfet - SOT-23 | 321000 | 0 |
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DMG1023UV-7 Mfr: diodes inc. |
DF06M Series 1.5 V 600 V 5 uA ThroughHoleBridgeRectifiers - DIP-4 | 318000 | 0 |
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BSH201,215 Mfr: nexperia |
12 V 80 dB 2300HzThroughHoleElectro-AcousticTransducer | 309000 | 0 |
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DMN63D8LDW-7 Mfr: diodes inc. |
SmallSignalField-EffectTransistor,1AI(D),30V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 303000 | 0 |
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DMG2307L-7 Mfr: diodes inc. |
N & P-Channel 20 V 35 / 74 mOhmsSurfaceMountMosfet-TSOP-6 | 300000 | 0 |
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ZXM61N03FTA Mfr: diodes inc. |
C-III Series 268 VDC 150 V RMS 395 V6000ARadialLeadVaristor | 297000 | 0 |
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2N7002LT3G Mfr: on semiconductor |
N-Channel 60 V 115 mA Surface Mount Small SignalMosfet - SOT-23 | 290000 | 0 |
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2N7002PS,115 Mfr: nexperia |
2N Series 80 V 1 A Medium-Power Plastic NPNSiliconTransistor - TO-225 | 285000 | 0 |
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IRLML5103TRPBF Mfr: infineon |
274874 | 0 |
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BSN20-7 Mfr: diodes inc. |
PH Series 2 mm Pitch8PositionThroughHoleTopEntryShrouded Header | 264000 | 0 |
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BSS84AKS,115 Mfr: nexperia |
SmallSignalField-EffectTransistor,0.85AI(D),30V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET | 261000 | 0 |
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STN3NF06 Mfr: st microelectronics |
N-Channel 60 V 0.1 Ohm STripFET II Power MosFet SMT- SOT-223 | 256000 | 0 |
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SI2318CDS-T1-GE3 Mfr: vishay |
TransistorOutputOptocoupler,1-Element,5300VIsolation | 255993 | 0 |
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DMG2302U-7 Mfr: diodes inc. |
N-Channel 20 V 90 mOhm Surface Mount EnhancementMode Mosfet -SOT-23-3 | 237000 | 0 |
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PMBF170,215 Mfr: nexperia |
Single Phase EMI Filter, 300V | 228000 | 0 |
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RK7002BMT116 Mfr: rohm semiconductor |
N-Channel 60 V 0.2 W Surface Mount 2.5VDriveSiliconPower Mosfet - SOT-23 | 228000 | 0 |
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BSH202,215 Mfr: nexperia |
BSH202 Series 30 V 0.9 Ohm 417mWP-ChannelEnhancement MOS Transistor - SOT-23 | 225000 | 0 |
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DMP2215L-7 Mfr: diodes inc. |
Dual N-Channel 30 V 2.8 O 0.3 W SMTEnhancementModeMosFet - SOT-363 | 225000 | 0 |
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DMN2065UW-7 Mfr: diodes inc. |
N-Channel 20 V 56 mOhm Surface MountEnhancementModeMosfet - SOT-323 | 222000 | 0 |
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2N7002PW,115 Mfr: nexperia |
219000 | 0 |
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MMBFJ177LT1G Mfr: on semiconductor |
MMBFJ177LT1G Series P?Channel 25 V JFET Chopper -SOT-23 | 219000 | 0 |
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NTK3043NT1G Mfr: on semiconductor |
200000 | 0 |
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DMN2005LPK-7 Mfr: diodes inc. |
Single N-Channel 20 V 1.7 Ohm 450 mW SiliconSurfaceMount Mosfet - UFDFN-3 | 198000 | 0 |
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DMN6140L-7 Mfr: diodes inc. |
SmallSignalField-EffectTransistor,1.33AI(D),20V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET | 198000 | 0 |
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ZXMN2A01FTA Mfr: diodes inc. |
Ceramic Capacitor, Multilayer, Ceramic,50V,1%+Tol,1% -Tol, C0G, 30ppm/Cel TC,0.001uF,SurfaceMount,0603 | 198000 | 0 |
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ZXMP3A13FTA Mfr: diodes inc. |
ZXM61N02F 20 V 0.18 OhmN-ChannelEnhancementModeVertical DMOS FET - SOT-23 | 189000 | 0 |
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BSS84AKV,115 Mfr: nexperia |
BSS84AKV Series 50 V 7.5 Ohm 170 mA Dual P-ChannelTrenchMOS FET - SOT-666 | 184000 | 0 |
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NTZD3152PT1G Mfr: on semiconductor |
SBAV70 Series 100 V 200 mA Surface MountDualSwitching Diode - SOT-323 | 160000 | 0 |
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DMP2035U-7 Mfr: diodes inc. |
N-Channel 30 V 460 mOhm SurfaceMountEnhancementModeMosfet - SOT-23-3 | 156000 | 0 |
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DMN5L06VK-7 Mfr: diodes inc. |
DMN5L06VK Series 50 V 2OhmDualN-ChannelEnhancementMode Mosfet - SOT-563 | 144000 | 0 |
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BSH105,215 Mfr: nexperia |
141000 | 0 |
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PMGD780SN,115 Mfr: nexperia |
PMEG4010 Series 40 V 1 ALowVFMEGASchottkyBarrierRectifier - SOD-123W | 141000 | 0 |
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NX7002BKR Mfr: nexperia |
NX7002BKR Series 60 V 2.8 Ohm 400 mW1nCSMTN-Channel TrenchMOS FET - SOT-23 | 135000 | 0 |
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DMP1045U-7 Mfr: diodes inc. |
P-Channel 12 V 31 mOhm Surface MountEnhancementModeMosfet - SOT-23-3 | 129000 | 0 |
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NTR1P02T1G Mfr: on semiconductor |
Small SignalField-EffectTransistor,0.88AI(D),20V,2-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET | 129000 | 0 |
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BVSS138LT1G Mfr: on semiconductor |
Ultra Small 1.8 V 3.5 uASurfaceMountUnipolarDetection Hall IC - HVSOF-5 | 126000 | 0 |
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NTS2101PT1G Mfr: on semiconductor |
126000 | 0 |
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DMN5L06WK-7 Mfr: diodes inc. |
N-Channel 50 V 2 Ohm MosFet Surface Mount-SOT-323-3 | 123000 | 0 |
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DMP3130LQ-7 Mfr: diodes inc. |
P-Channel 30 V 150 mOhm Surface MountEnhancementMode Mosfet - SOT-23 | 123000 | 0 |
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IRLML2402TRPBF Mfr: infineon |
PowerField-EffectTransistor,2.7AI(D),60V,0.092ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-236AB | 117000 | 0 |
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STR1P2UH7 Mfr: st microelectronics |
P-CHANNEL 20 V 0.1 OHM SURFACE MOUNT STRIPFET H7POWER MOSFET - SOT-23 | 117000 | 0 |
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2N7002VC-7 Mfr: diodes inc. |
2N7002VC Series 60 V 280 mA 7.5OhmDualN-ChEnhancement Mode Mosfet - SOT-563 | 111000 | 0 |
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PMV48XP,215 Mfr: nexperia |
PMLL4448 Series 75 V 200 mA Surface MountHighSpeedDiode - SOD-80C | 111000 | 0 |
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SI9945BDY-T1-GE3 Mfr: vishay |
102095 | 0 |
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BSN20BKR Mfr: nexperia |
102000 | 0 |
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