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BB131,115 | NXP SEMICONDUCTOR

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NXP SEMICONDUCTOR BB131,115

SOD323/TV VARICAP


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

COO: CN

Subject to tariff fees

Quantity Cost
3000 -

Electrical Characteristics

Breakdown Voltage-Min 30
Configuration SINGLE
Diode Cap Tolerance 36
Diode Capacitance Ratio-Min 12
Diode Capacitance-Nom 12.5
Diode Element Material SILICON
Diode Type VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY
JESD-30 Code R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 125
Operating Temperature-Min -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 30
Reverse Current-Max 0.01
Reverse Test Voltage 30
Sub Category Varactors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED