Semiconductors > Transistors > Power Field-Effect Transistors

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Case Connection DRAIN DRAIN SOURCE ISOLATED

Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES, 2 ELEMENTS WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

Feedback Cap-Max (Crss) 10 50

FET Technology METAL-OXIDE SEMICONDUCTOR