Manufacturer
Additional Feature
Avalanche Energy Rating (Eas)
Case Connection
Configuration
Drain Current-Max (Abs) (ID)
Drain Current-Max (ID)
Drain-source On Resistance-Max
DS Breakdown Voltage-Min
Feedback Cap-Max (Crss)
FET Technology
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
Moisture Sensitivity Level
Number of Elements
Number of Terminals
Operating Mode
Operating Temperature-Max
Package Body Material
Package Shape
Package Style
Peak Reflow Temperature (Cel)
Polarity/Channel Type
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Qualification Status
Reference Standard
Sub Category
Surface Mount
Terminal Finish
Terminal Form
Terminal Position
Time@Peak Reflow Temperature-Max (s)
Transistor Application
Transistor Element Material
Turn-off Time-Max (toff)
Turn-on Time-Max (ton)
Items per page:
| Part Number | Part Description | In Stock | On Order | Lead Time (weeks) | Price |
|---|---|---|---|---|---|
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DMG2305UX-13 Mfr: diodes inc. |
2696400 | 0 |
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DMN3404L-7 Mfr: diodes inc. |
2598000 | 0 |
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DMP2305U-7 Mfr: diodes inc. |
1317000 | 0 |
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NTR4501NT1G Mfr: on semiconductor |
Power Field-Effect Transistor, 3.2A I(D), 20V,0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-236AB | 948000 | 0 |
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DMP3098L-7 Mfr: diodes inc. |
660000 | 0 |
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IRLML0060TRPBF Mfr: infineon |
624879 | 0 |
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DMG2305UX-7 Mfr: diodes inc. |
540000 | 0 |
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DMN3404LQ-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 4.2A I(D), 30V,0.028ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 423000 | 0 |
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STS4DNF60L Mfr: st microelectronics |
4A, 60V, 0.065ohm, 2 CHANNEL, N-CHANNEL, Si, POWER,MOSFET | 405000 | 0 |
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NTD5867NLT4G Mfr: on semiconductor |
Power Field-Effect Transistor, 20A I(D), 60V,0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET | 260000 | 0 |
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DMP3130L-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 3.5A I(D), 30V,0.077ohm, 1-Element, P-Channel, Silicon,Metal-oxide Semiconductor FET | 231000 | 0 |
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NTD20P06LT4G Mfr: on semiconductor |
220000 | 0 |
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NVTFS4C05NTAG Mfr: on semiconductor |
Power Field-Effect Transistor, 22A I(D), 30V,0.0051ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 219000 | 0 |
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NTD3055L104T4G Mfr: on semiconductor |
205000 | 0 |
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IRF3205PBF Mfr: infineon |
144842 | 0 |
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ZVN2106GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 0.71A I(D), 60V,2ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET | 139000 | 0 |
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ZXMN4A06GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 5A I(D), 40V,0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET | 127000 | 0 |
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IRFB7446PBF Mfr: infineon |
118900 | 0 |
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SI7850DP-T1-E3 Mfr: siliconix (vishay) |
117000 | 0 |
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IRF7103TRPBF Mfr: infineon |
115112 | 0 |
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STP76NF75 Mfr: st microelectronics |
Power Field-Effect Transistor, 80A I(D), 75V,0.011ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-220AB | 91400 | 0 |
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NVTFS4C08NTWG Mfr: on semiconductor |
Power Field-Effect Transistor, N-Channel,Metal-oxide Semiconductor FET | 80000 | 0 |
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NTF3055L108T1G Mfr: on semiconductor |
Power Field-Effect Transistor, 3A I(D), 60V,0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-261AA | 76000 | 0 |
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NTF2955T1G Mfr: on semiconductor |
Power Field-Effect Transistor, 1.7A I(D), 60V,0.185ohm, 1-Element, P-Channel, Silicon,Metal-oxide Semiconductor FET, TO-261AA | 59000 | 0 |
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NVF2955T1G Mfr: on semiconductor |
Power Field-Effect Transistor, 1.7A I(D), 60V,0.185ohm, 1-Element, P-Channel, Silicon,Metal-oxide Semiconductor FET, TO-261AA | 59000 | 0 |
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ZVP4424GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 0.48A I(D), 240V,11ohm, 1-Element, P-Channel, Silicon, Metal-oxideSemiconductor FET | 55000 | 0 |
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DMP3099L-7 Mfr: diodes inc. |
54000 | 0 |
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ZVNL120GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 0.32A I(D), 200V,10ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET | 52852 | 0 |
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ZXMN10B08E6TA Mfr: diodes inc. |
Power Field-Effect Transistor, 1.6A I(D), 100V,0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET | 52560 | 0 |
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NTD6415ANLT4G Mfr: on semiconductor |
Power Field-Effect Transistor, 23A I(D), 100V,0.056ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 52500 | 0 |
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DMP2035UVT-7 Mfr: diodes inc. |
51000 | 0 |
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IRFP450PBF Mfr: siliconix (vishay) |
Power Field-Effect Transistor, 14A I(D), 500V,0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-247AC | 50325 | 0 |
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STS9P2UH7 Mfr: st microelectronics |
P-CHANNEL 20 V 0.0225 ? 2.7 W SMT STRIPFET H7 POWERMOSFET - SOIC-8 | 47500 | 0 |
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IRF520PBF Mfr: siliconix (vishay) |
Power Field-Effect Transistor, 9.2A I(D), 100V,0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB | 47198 | 0 |
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IRLML9303TRPBF Mfr: infineon |
Power Field-Effect Transistor, 2.3A I(D), 30V,0.165ohm, 1-Element, P-Channel, Silicon,Metal-oxide Semiconductor FET, TO-236AB | 42000 | 0 |
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NTD3055L170T4G Mfr: on semiconductor |
35000 | 0 |
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STP11NK50ZFP Mfr: st microelectronics |
Power Field-Effect Transistor, 10A I(D), 500V,0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB | 34200 | 0 |
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IRLU8729-701PBF Mfr: infineon |
Power Field-Effect Transistor, N-Channel,Metal-oxide Semiconductor FET | 33300 | 0 |
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DMP2066LDM-7 Mfr: diodes inc. |
30000 | 0 |
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CPH6354-TL-W Mfr: on semiconductor |
Power Field-Effect Transistor, 4A I(D), 60V,0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxideSemiconductor FET | 27000 | 0 |
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ZXMP7A17GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 3.7A I(D), 70V,0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxideSemiconductor FET, TO-261AA | 23000 | 0 |
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NVMFD5877NLT1G Mfr: on semiconductor |
22500 | 0 |
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DMP2008UFG-7 Mfr: diodes inc. |
Power Field-Effect Transistor, P-Channel,Metal-oxide Semiconductor FET | 22000 | 0 |
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STP16NF06 Mfr: st microelectronics |
Power Field-Effect Transistor, 16A I(D), 60V,0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB | 21922 | 0 |
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2SK3550-01R Mfr: fuji |
10A, 900V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET | 19000 | 0 |
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DMP2160U-7 Mfr: diodes inc. |
18000 | 0 |
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NTD24N06LT4G Mfr: on semiconductor |
Power Field-Effect Transistor, 24A I(D), 60V,0.045ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 17500 | 0 |
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STD12NF06LT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 12A I(D), 60V,0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-252 | 17500 | 0 |
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STD86N3LH5 Mfr: st microelectronics |
Power Field-Effect Transistor, 80A I(D), 30V,0.0065ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-252 | 17500 | 0 |
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STD25NF10LT4 Mfr: st microelectronics |
25A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET,TO-252 | 15684 | 0 |
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ZVP2106GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 0.45A I(D), 60V,5ohm, 1-Element, P-Channel, Silicon, Metal-oxideSemiconductor FET | 15000 | 0 |
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IRF2804PBF Mfr: infineon |
Power Field-Effect Transistor, 75A I(D), 40V,0.0023ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-220AB | 13700 | 0 |
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NTD25P03LT4G Mfr: on semiconductor |
12500 | 0 |
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NTD5865NLT4G Mfr: on semiconductor |
Power Field-Effect Transistor, 40A I(D), 60V,0.019ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 12500 | 0 |
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NTD6414ANT4G Mfr: on semiconductor |
Power Field-Effect Transistor, 32A I(D), 100V,0.037ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 12500 | 0 |
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STP4NK80Z Mfr: st microelectronics |
Power Field-Effect Transistor, 3A I(D), 800V,3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB | 12052 | 0 |
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ZVNL110GTA Mfr: diodes inc. |
12000 | 0 |
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IRF3205ZPBF Mfr: infineon |
11900 | 0 |
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IRF8010PBF Mfr: infineon |
Power Field-Effect Transistor, 75A I(D), 100V,0.015ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-220AB | 11772 | 0 |
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STW32NM50N Mfr: st microelectronics |
Power Field-Effect Transistor, N-Channel,Metal-oxide Semiconductor FET | 11340 | 0 |
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IRLR024NPBF Mfr: infineon |
10891 | 0 |
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IRF7319PBF Mfr: infineon |
Power Field-Effect Transistor, 6.5A I(D), 30V,0.029ohm, 2-Element, N-Channel and P-Channel,Silicon, Metal-oxide Semiconductor FET, MS-012AA | 10450 | 0 |
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DMC4050SSD-13 Mfr: diodes inc. |
Power Field-Effect Transistor, 4.2A I(D), 40V,0.06ohm, 2-Element, N-Channel and P-Channel,Silicon, Metal-oxide Semiconductor FET | 10000 | 0 |
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STD2LN60K3 Mfr: st microelectronics |
10000 | 0 |
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IRF6623TRPBF Mfr: infineon north america |
Power Field-Effect Transistor, 16A I(D), 20V,0.0057ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 9600 | 0 |
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STP30NF20 Mfr: st microelectronics |
9190 | 0 |
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IRLMS1503TRPBF Mfr: infineon north america |
Power Field-Effect Transistor, 3.2A I(D), 30V,0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET | 9000 | 0 |
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NTLJS4114NT1G Mfr: on semiconductor |
Power Field-Effect Transistor, 3.6A I(D), 30V,0.045ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 9000 | 0 |
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STP19NF20 Mfr: st microelectronics |
Power Field-Effect Transistor, 15A I(D), 200V,0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB | 9000 | 0 |
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IRF2805PBF Mfr: infineon |
Power Field-Effect Transistor, 75A I(D), 55V,0.0047ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-220AB | 8908 | 0 |
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IRF7507TRPBF Mfr: infineon |
Power Field-Effect Transistor, 2.4A I(D), 20V,0.14ohm, 2-Element, N-Channel and P-Channel,Silicon, Metal-oxide Semiconductor FET | 8000 | 0 |
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STP8NM50N Mfr: st microelectronics |
Power Field-Effect Transistor, 5A I(D), 500V,0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB | 7900 | 0 |
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NTD20N06LT4G Mfr: on semiconductor |
Power Field-Effect Transistor, 20A I(D), 60V,0.048ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 7500 | 0 |
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NTD3055-094T4G Mfr: on semiconductor |
Power Field-Effect Transistor, 12A I(D), 60V,0.094ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 7500 | 0 |
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STD1NK80ZT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 1A I(D), 800V,16ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-252AA | 7500 | 0 |
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STD2N62K3 Mfr: st microelectronics |
Power Field-Effect Transistor, 2.2A I(D), 620V,3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-252 | 7500 | 0 |
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IRF530NSTRLPBF Mfr: infineon |
Power Field-Effect Transistor, 17A I(D), 100V,0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET | 7200 | 0 |
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IRF630PBF Mfr: siliconix (vishay) |
Power Field-Effect Transistor, 9A I(D), 200V,0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB | 7073 | 0 |
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IRF1010NPBF Mfr: infineon |
6776 | 0 |
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IRFB3207ZPBF Mfr: infineon |
Power Field-Effect Transistor, 120A I(D), 75V,0.0041ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-220AB | 6000 | 0 |
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IRLML6401TRPBF Mfr: infineon |
Power Field-Effect Transistor, 4.3A I(D), 12V,0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxideSemiconductor FET | 6000 | 0 |
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NTHC5513T1G Mfr: on semiconductor |
Power Field-Effect Transistor, 3.1A I(D), 20V,0.08ohm, 2-Element, N-Channel and P-Channel,Silicon, Metal-oxide Semiconductor FET | 6000 | 0 |
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NTHD3102CT1G Mfr: on semiconductor |
Power Field-Effect Transistor, 4A I(D), 20V,0.045ohm, 2-Element, N-Channel and P-Channel,Silicon, Metal-oxide Semiconductor FET | 6000 | 0 |
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NTHD4508NT1G Mfr: on semiconductor |
Power Field-Effect Transistor, 3.1A I(D), 20V,0.075ohm, 2-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 6000 | 0 |
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NTLJD3115PT1G Mfr: on semiconductor |
Power Field-Effect Transistor, 2.3A I(D), 20V,0.135ohm, 2-Element, P-Channel, Silicon,Metal-oxide Semiconductor FET | 6000 | 0 |
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STL120N4F6AG Mfr: st microelectronics |
Power Field-Effect Transistor, N-Channel,Metal-oxide Semiconductor FET | 6000 | 0 |
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STL150N3LLH5 Mfr: st microelectronics |
Power Field-Effect Transistor, 35A I(D), 30V,0.0024ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 6000 | 0 |
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STL19N60M2 Mfr: st microelectronics |
Power Field-Effect Transistor | 6000 | 0 |
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STL26NM60N Mfr: st microelectronics |
Power Field-Effect Transistor, 2.7A I(D), 600V,0.185ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 6000 | 0 |
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STL7N6LF3 Mfr: st microelectronics |
Power Field-Effect Transistor | 6000 | 0 |
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STL90N3LLH6 Mfr: st microelectronics |
Power Field-Effect Transistor, 24A I(D), 30V,0.0073ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 6000 | 0 |
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STU3LN80K5 Mfr: st microelectronics |
Power Field-Effect Transistor | 6000 | 0 |
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ZXMN10A08DN8TA Mfr: diodes inc. |
Power Field-Effect Transistor, 2.1A I(D), 100V,0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET | 6000 | 0 |
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IRFR1205PBF Mfr: infineon |
Power Field-Effect Transistor, 20A I(D), 55V,0.027ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-252AA | 5824 | 0 |
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PSMN005-75P Mfr: nxp |
Power Field-Effect Transistor, 75A I(D), 75V,0.005ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 5796 | 0 |
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IRLL014NPBF Mfr: infineon |
Power Field-Effect Transistor, 2.8A I(D), 55V,0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-261AA | 5784 | 0 |
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IRF7424PBF Mfr: infineon |
Power Field-Effect Transistor, 11A I(D), 30V,0.0135ohm, 1-Element, P-Channel, Silicon,Metal-oxide Semiconductor FET, MS-012AA | 5652 | 0 |
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STP55NF06L Mfr: st microelectronics |
5350 | 0 |
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IRF1404LPBF Mfr: infineon |
Power Field-Effect Transistor, 75A I(D), 40V,0.004ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-262AA | 5292 | 0 |
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CSD16340Q3 Mfr: texas instruments |
Power Field-Effect Transistor, 21A I(D), 25V,0.0078ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 5000 | 0 |
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