Manufacturer
Additional Feature
Avalanche Energy Rating (Eas)
Case Connection
Configuration
Drain Current-Max (Abs) (ID)
Drain Current-Max (ID)
Drain-source On Resistance-Max
DS Breakdown Voltage-Min
Feedback Cap-Max (Crss)
FET Technology
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
Moisture Sensitivity Level
Number of Elements
Number of Terminals
Operating Mode
Operating Temperature-Max
Package Body Material
Package Shape
Package Style
Peak Reflow Temperature (Cel)
Polarity/Channel Type
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Qualification Status
Reference Standard
Sub Category
Surface Mount
Terminal Finish
Terminal Form
Terminal Position
Time@Peak Reflow Temperature-Max (s)
Transistor Application
Transistor Element Material
Turn-off Time-Max (toff)
Turn-on Time-Max (ton)
Items per page:
| Part Number | Part Description | In Stock | On Order | Lead Time (weeks) | Price |
|---|---|---|---|---|---|
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DMG2305UX-13 Mfr: diodes inc. |
Power Field-Effect Transistor, 4.2AI(D),20V,0.052ohm, 1-Element,P-Channel,Silicon,Metal-oxide Semiconductor FET | 1826400 | 0 |
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DMP2305U-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 4.2A I(D),20V,0.06ohm, 1-Element, P-Channel, Silicon,Metal-oxideSemiconductor FET | 1280180 | 0 |
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DMN3404L-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 5.8AI(D),30V,0.028ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET | 984000 | 0 |
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BUK98180-100A/CUX Mfr: nexperia |
Power Field-Effect Transistor, 4.6A I(D),100V,0.201ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET | 629000 | 0 |
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IRLML0060TRPBF Mfr: infineon |
Power Field-Effect Transistor, 2.7AI(D),60V,0.092ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-236AB | 600000 | 0 |
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NTR4501NT1G Mfr: on semiconductor |
Power Field-Effect Transistor, 3.2AI(D),20V,0.08ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-236AB | 534000 | 0 |
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NVD6416ANLT4G-VF01 Mfr: on semiconductor |
Power Field-Effect Transistor | 342500 | 0 |
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DMP2160U-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 3.2AI(D),20V,0.08ohm, 1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET | 330000 | 0 |
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NTD5867NLT4G Mfr: on semiconductor |
Power Field-Effect Transistor, 20A I(D),60V,0.05ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET | 285000 | 0 |
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DMG2305UX-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 4.2A I(D),20V,0.052ohm, 1-Element, P-Channel,Silicon,Metal-oxide Semiconductor FET | 258000 | 0 |
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DMP3099L-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 3.8AI(D),30V,0.065ohm, 1-Element,P-Channel,Silicon,Metal-oxide Semiconductor FET | 238830 | 0 |
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STD1NK80ZT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 1A I(D),800V,16ohm,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-252AA | 220000 | 0 |
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DMN3404LQ-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 4.2AI(D),30V,0.028ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET | 192000 | 0 |
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BUK98150-55A/CUF Mfr: nexperia |
Power Field-Effect Transistor, 5.5A I(D),55V,0.161ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET | 184000 | 0 |
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NVTFS4C08NTWG Mfr: on semiconductor |
Power Field-Effect Transistor,N-Channel,Metal-oxide Semiconductor FET | 175000 | 0 |
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SI7850DP-T1-E3 Mfr: siliconix (vishay) |
PowerField-EffectTransistor,6.2AI(D),60V,0.022ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 171000 | 0 |
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DMP3130L-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 3.5A I(D),30V,0.077ohm, 1-Element, P-Channel,Silicon,Metal-oxide Semiconductor FET | 165000 | 0 |
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BUK762R9-40E,118 Mfr: nexperia |
Power Field-Effect Transistor, 100A I(D),40V,0.0029ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET | 158400 | 0 |
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STP76NF75 Mfr: st microelectronics |
Power Field-Effect Transistor, 80A I(D),75V,0.011ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-220AB | 146850 | 0 |
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STN1HNK60 Mfr: st microelectronics |
Power Field-Effect Transistor, 0.4AI(D),600V,8.5ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET | 128000 | 0 |
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STF9N80K5 Mfr: st microelectronics |
Power Field-Effect Transistor | 126150 | 0 |
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ZXMN4A06GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 5A I(D),40V,0.05ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET | 117000 | 0 |
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IRF3205PBF Mfr: infineon |
Power Field-Effect Transistor, 75A I(D),55V,0.008ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-220AB | 113658 | 0 |
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ZVN2106GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 0.71A I(D),60V,2ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET | 98000 | 0 |
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IRFP450PBF Mfr: siliconix (vishay) |
Power Field-Effect Transistor, 14AI(D),500V,0.4ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-247AC | 95975 | 0 |
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NVMFD5877NLT1G Mfr: on semiconductor |
Power Field-Effect Transistor, 6A I(D),60V,0.06ohm, 2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET | 93000 | 0 |
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STS4DNF60L Mfr: st microelectronics |
4A, 60V, 0.065ohm, 2 CHANNEL, N-CHANNEL, Si,POWER,MOSFET | 92500 | 0 |
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NVTFS4C05NTAG Mfr: on semiconductor |
Power Field-Effect Transistor, 22AI(D),30V,0.0051ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET | 91500 | 0 |
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PHT6NQ10T,135 Mfr: nexperia |
Power Field-Effect Transistor, 3AI(D),100V,0.09ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 88000 | 0 |
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STN2NF10 Mfr: st microelectronics |
Power Field-Effect Transistor, 2AI(D),100V,0.26ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET | 87184 | 0 |
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IRFBF20STRLPBF Mfr: siliconix (vishay) |
Power Field-Effect Transistor,1.7AI(D),900V,8ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 70400 | 0 |
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IRFML8244TRPBF Mfr: infineon |
Power Field-EffectTransistor,5.8AI(D),25V,0.024ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-236AB | 69000 | 0 |
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NVF2955T1G Mfr: on semiconductor |
Power Field-Effect Transistor, 1.7A I(D),60V,0.185ohm, 1-Element, P-Channel,Silicon,Metal-oxide Semiconductor FET, TO-261AA | 63000 | 0 |
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STD65N55F3 Mfr: st microelectronics |
Power Field-Effect Transistor, 80AI(D),55V,0.0085ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET | 62500 | 0 |
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NTLJD3119CTBG Mfr: on semiconductor |
Power Field-Effect Transistor, 2.6A I(D),20V,0.065ohm, 2-Element, N-Channel andP-Channel,Silicon, Metal-oxide Semiconductor FET | 60000 | 0 |
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STB7NK80ZT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 5.2AI(D),800V,1.8ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-263AB | 57000 | 0 |
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STP30NF10 Mfr: st microelectronics |
Power Field-Effect Transistor, 35A I(D),100V,0.045ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-220AB | 56550 | 0 |
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STB140NF75T4 Mfr: st microelectronics |
Power Field-Effect Transistor, 120A I(D),75V,0.0075ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-263 | 56000 | 0 |
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NTF2955T1G Mfr: on semiconductor |
Power Field-EffectTransistor,1.7AI(D),60V,0.185ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET,TO-261AA | 53000 | 0 |
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STFW3N150 Mfr: st microelectronics |
Power Field-Effect Transistor, 2.5AI(D),1500V,9ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 51780 | 0 |
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STD12NF06T4 Mfr: st microelectronics |
Power Field-Effect Transistor, 12A I(D),60V,0.1ohm,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-252 | 50000 | 0 |
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NTF3055L108T1G Mfr: on semiconductor |
Power Field-Effect Transistor, 3A I(D),60V,0.12ohm,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-261AA | 48000 | 0 |
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STS9P2UH7 Mfr: st microelectronics |
P-CHANNEL 20 V 0.0225 ? 2.7 W SMT STRIPFET H7 POWERMOSFET - SOIC-8 | 47500 | 0 |
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STD6NK50ZT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 5.6A I(D),500V,1.2ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-252 | 45000 | 0 |
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STP7NK40Z Mfr: st microelectronics |
Power Field-Effect Transistor,5.4AI(D),400V,1ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB | 43000 | 0 |
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BSP372NH6327XTSA1 Mfr: infineon |
Power Field-Effect Transistor, 1-Element, Silicon | 41000 | 0 |
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PHN210T,118 Mfr: nexperia |
Power Field-Effect Transistor, 3.4A I(D),30V,0.1ohm, 2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, MS-012AA | 40000 | 0 |
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STD8NM50N Mfr: st microelectronics |
Power Field-Effect Transistor, 5AI(D),500V,0.79ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-252 | 40000 | 0 |
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BUK9875-100A/CUX Mfr: nexperia |
Power Field-Effect Transistor, 7AI(D),100V,0.084ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET | 39000 | 0 |
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DMN6068LK3-13 Mfr: diodes inc. |
Power Field-Effect Transistor, 6A I(D),60V,0.068ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-252AA | 37500 | 0 |
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STD1NK60T4 Mfr: st microelectronics |
Power Field-Effect Transistor, 1A I(D),600V,8.5ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-252AA | 37500 | 0 |
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STD4NK80ZT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 3A I(D),800V,3.5ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-252AA | 37500 | 0 |
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IRF2804PBF Mfr: infineon |
Power Field-Effect Transistor, 75AI(D),40V,0.0023ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-220AB | 36364 | 0 |
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IRFR3910TRPBF Mfr: infineon |
PowerField-EffectTransistor,16AI(D),100V,0.115ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-252AA | 36000 | 0 |
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STP11NK50ZFP Mfr: st microelectronics |
Power Field-Effect Transistor, 10AI(D),500V,0.52ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-220AB | 35200 | 0 |
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IRFD9120PBF Mfr: siliconix (vishay) |
Power Field-Effect Transistor, 1A I(D),100V,0.6ohm, 1-Element, P-Channel, Silicon,Metal-oxideSemiconductor FET | 33476 | 0 |
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NTD25P03LT4G Mfr: on semiconductor |
Power Field-Effect Transistor, 25A I(D),30V,0.08ohm, 1-Element, P-Channel, Silicon,Metal-oxideSemiconductor FET | 32500 | 0 |
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IRFB7446PBF Mfr: infineon |
Power Field-Effect Transistor, 120AI(D),40V,0.0033ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-220AB | 32300 | 0 |
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STB60NF06LT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 60AI(D),60V,0.016ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-263AB | 32000 | 0 |
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ZVP4424GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 0.48A I(D),240V,11ohm, 1-Element, P-Channel, Silicon,Metal-oxideSemiconductor FET | 31000 | 0 |
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IRF3205STRLPBF Mfr: infineon |
Power Field-EffectTransistor,75AI(D),55V,0.008ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 30913 | 0 |
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DMP3098L-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 3.8AI(D),30V,0.07ohm, 1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET | 30000 | 0 |
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NTD3055-094T4G Mfr: on semiconductor |
Power Field-Effect Transistor, 12A I(D), 60V,0.094ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET | 30000 | 0 |
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ZVN4206GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 1AI(D),60V,1.5ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 29000 | 0 |
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IRFS3806TRLPBF Mfr: infineon |
Power Field-Effect Transistor,N-Channel,Metal-oxideSemiconductor FET | 28800 | 0 |
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ZVNL120GTA Mfr: diodes inc. |
Power Field-Effect Transistor,0.32AI(D),200V,10ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 27785 | 0 |
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IRFZ44NPBF Mfr: infineon |
Power Field-Effect Transistor, 49AI(D),55V,0.0175ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-220AB | 27300 | 0 |
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IRF8010PBF Mfr: infineon |
Power Field-Effect Transistor, 75A I(D),100V,0.015ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-220AB | 26610 | 0 |
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IRF9540NSTRLPBF Mfr: infineon |
Power Field-Effect Transistor,23AI(D),100V,0.117ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET,TO-263AB | 25800 | 0 |
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IRL2203NPBF Mfr: infineon |
Power Field-EffectTransistor,75AI(D),30V,0.007ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB | 24700 | 0 |
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CPH6354-TL-W Mfr: on semiconductor |
Power Field-Effect Transistor, 4A I(D),60V,0.1ohm,1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET | 24000 | 0 |
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DMN2050L-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 5.9AI(D),20V,0.029ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET | 24000 | 0 |
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DMP2066LDM-7 Mfr: diodes inc. |
Power Field-Effect Transistor, 4.6A I(D),20V,0.04ohm, 1-Element, P-Channel, Silicon,Metal-oxideSemiconductor FET | 24000 | 0 |
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NTD6415ANLT4G Mfr: on semiconductor |
Power Field-Effect Transistor, 23A I(D),100V,0.056ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET | 22500 | 0 |
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STD3NK80ZT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 2.5AI(D),800V,4.5ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-252 | 22500 | 0 |
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STP80NF12 Mfr: st microelectronics |
Power Field-Effect Transistor, 80A I(D),120V,0.018ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-220AB | 22000 | 0 |
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STP5NK100Z Mfr: st microelectronics |
Power Field-Effect Transistor, 3.5AI(D),1000V,3.7ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-220AB | 20354 | 0 |
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IRF520PBF Mfr: siliconix (vishay) |
Power Field-Effect Transistor, 9.2A I(D),100V,0.27ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB | 20170 | 0 |
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BSC057N03LSGATMA1 Mfr: infineon |
Power Field-Effect Transistor, 17A I(D),30V,0.0085ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET | 20000 | 0 |
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IPD80R1K4CEATMA1 Mfr: infineon |
Power Field-Effect Transistor | 20000 | 0 |
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IRF7862TRPBF Mfr: infineon north america |
Power Field-Effect Transistor, N-Channel,Metal-oxide Semiconductor FET | 20000 | 0 |
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NTD3055L104T4G Mfr: on semiconductor |
Power Field-EffectTransistor,12AI(D),60V,0.104ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET | 20000 | 0 |
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STD3NK90ZT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 3A I(D),900V,4.8ohm,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-252AA | 20000 | 0 |
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STD4NK60ZT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 4A I(D), 600V,2ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-252AA | 20000 | 0 |
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ZVN4210GTA Mfr: diodes inc. |
Power Field-Effect Transistor, 0.8A I(D),100V,1.8ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET | 20000 | 0 |
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ZXMN10B08E6TA Mfr: diodes inc. |
Power Field-Effect Transistor, 1.6AI(D),100V,0.23ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET | 19560 | 0 |
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STU10P6F6 Mfr: st microelectronics |
Power Field-Effect Transistor, 7.2A I(D),60V,0.16ohm, 1-Element, P-Channel, Silicon,Metal-oxideSemiconductor FET, TO-251 | 19500 | 0 |
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IRF9Z34NPBF Mfr: infineon |
Power Field-Effect Transistor, 19A I(D),55V,0.1ohm,1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET, TO-220AB | 19233 | 0 |
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STP45NF06 Mfr: st microelectronics |
Power Field-Effect Transistor, 38AI(D),60V,0.028ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-220AB | 18900 | 0 |
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IRF7413ZTRPBF Mfr: infineon |
Power Field-Effect Transistor, 13AI(D),30V,0.01ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,MS-012AA | 18114 | 0 |
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NTLJD3115PT1G Mfr: on semiconductor |
Power Field-Effect Transistor, 2.3A I(D), 20V,0.135ohm, 2-Element, P-Channel, Silicon,Metal-oxide Semiconductor FET | 18000 | 0 |
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STB16NF06LT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 16A I(D),60V,0.1ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-263AB | 18000 | 0 |
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ZXMP6A16DN8TA Mfr: diodes inc. |
Power Field-Effect Transistor, 2.9AI(D),60V,0.085ohm, 2-Element,P-Channel,Silicon,Metal-oxide Semiconductor FET | 18000 | 0 |
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IRFP064NPBF Mfr: infineon |
Power Field-Effect Transistor,110AI(D),55V,0.008ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-247AC | 17167 | 0 |
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STD3NK80Z-1 Mfr: st microelectronics |
Power Field-Effect Transistor, 2.5AI(D),800V,4.5ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-251 | 16650 | 0 |
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IRFB3306PBF Mfr: infineon |
Power Field-Effect Transistor, 160AI(D),60V,0.0042ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-220AB | 16300 | 0 |
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IRFR9120NTRPBF Mfr: infineon |
Power Field-Effect Transistor, 6.6A I(D), 100V,0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxideSemiconductor FET, TO-252AA | 16000 | 0 |
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STB23NM50N Mfr: st microelectronics |
Power Field-Effect Transistor,17AI(D),500V,0.19ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-263AB | 16000 | 0 |
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STB6NK90ZT4 Mfr: st microelectronics |
Power Field-Effect Transistor, 5.8A I(D),900V,2ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET | 16000 | 0 |
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IRFZ44ESTRLPBF Mfr: infineon |
Power Field-Effect Transistor, 48A I(D),60V,0.023ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET | 15200 | 0 |
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