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IRF5210STRLPBF | INFINEON

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INFINEON IRF5210STRLPBF

Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK


Ordering Info

In Stock: 61600 Delivery

MOQ: 800

Package Quantity: 800

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
800-61599 $1.73
61600+ $1.61


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Electrical Characteristics

Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 120
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 38
Drain Current-Max (ID) 38
Drain-source On Resistance-Max 0.06
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 170
Pulsed Drain Current-Max (IDM) 140
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON