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STGD8NC60KDT4 | ST MICROELECTRONICS

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ST MICROELECTRONICS STGD8NC60KDT4

DPAK/IGBT 8A 600V


Ordering Info

In Stock: 0

Package Quantity: 2500

COO: CN

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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 15
Collector-emitter Voltage-Max 600
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Thr Voltage-Max 6.5
Gate-emitter Voltage-Max 20
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 62
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 242
Turn-on Time-Nom (ton) 23