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STGP19NC60SD | ST MICROELECTRONICS

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ST MICROELECTRONICS STGP19NC60SD


Ordering Info

In Stock: 0

MOQ: 150

Package Quantity: 50

COO: CN

Subject to tariff fees.

Quantity Cost
150 -

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 40
Collector-emitter Voltage-Max 600
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Thr Voltage-Max 5.75
Gate-emitter Voltage-Max 20
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 535
Turn-on Time-Nom (ton) 23.5